2020 Fiscal Year Final Research Report
Changes in dislocation characteristics under light irradiation in inorganic semiconductors
| Project/Area Number |
19K22050
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| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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| Allocation Type | Multi-year Fund |
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| Review Section |
Medium-sized Section 26:Materials engineering and related fields
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Project Period (FY) |
2019-06-28 – 2021-03-31
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| Keywords | 光照射効果 / 転位 / 無機半導体 |
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| Outline of Final Research Achievements |
In inorganic semiconductors, dislocations are thought to have a strong influence on the movement of electrons and holes. In this study, as a result of development of newly designed system which enable light to insert into a scanning probe microscope, it was confirmed that the light irradiation system works well. After that, when the local electrical conductivity characteristics of the dislocations introduced by bicrystal technique were evaluated, it was found that the dislocations can exhibit higher electrical conductivity than the bulk depending on the irradiated light.
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| Free Research Field |
結晶欠陥工学
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| Academic Significance and Societal Importance of the Research Achievements |
本研究では、双結晶法を用いて半導体材料の転位列を作製するとともに、そうした試料に対して光環境制御を施しながら物性計測可能な装置システムの開発を行った。この装置では、材料の電気伝導特性が光環境にどのように応答するのかについて高い空間分解能で評価することが可能であることを確認した。装置開発に成功した結果、転位の電気伝導性と光照射波長の関係を検出できた。この研究成果により、今後、転位がどのように光と相互作用を起こすのかについて、転位の機能的性質の観点で理解可能となると期待される。
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