Development of High-Throughput Micro-LED Fabrication Process Utilizing Crystallographic Orientation Modulated Templates

2020 Fiscal Year Final Research Report

• Project/Area Number: 19K22145
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 30:Applied physics and engineering and related fields
• Research Institution: Osaka University
• Principal Investigator: Katayama Ryuji 大阪大学, 工学研究科, 教授 (40343115)
• Co-Investigator(Kenkyū-buntansha): 上向井 正裕 大阪大学, 工学研究科, 助教 (80362672)
• Project Period (FY): 2019-06-28 – 2021-03-31
• Keywords: μLED / 結晶面方位 / MOVPE / 表面活性化接合

Outline of Final Research Achievements

The purpose of this research was to develop a crystallographic technology that dramatically reduces the extremely expensive manufacturing cost and long manufacturing duration of the current μLED panels, in which each LED chip for one pixel is picked and placed separately. Crystallographic-orientation-modulated GaN templates tiled with microdomains with different crystallographic orientations were successfully prepared utilizing the surface-activated wafer bonding technology, and an InGaN quantum wells were grown on the template. Here we demonstrated a high-throughput fabrication process for full-color μLED utilizing the strong dependences of the In incorporation efficiency as well as of the emission wavelength shift due to the quantum confinement Stark effect on the crystallographic orientations of InGaN growth.

Free Research Field

結晶工学

Academic Significance and Societal Importance of the Research Achievements

本研究で得られた、結晶面方位の異なる薄膜の積層技術とこれを用いて作製する結晶面方位変調テンプレートは、現状のエピタキシャル成長技術では実現し得ない新規構造のデバイス実現への道を拓く、結晶工学分野における革新的なツールとなる。つまり、本研究で提案する技術開発は、窒化物半導体材料やμLEDのみならず、縦型パワートランジスタ、垂直共振器型レーザなど、全ての集積型デバイス・システム開発の突破口となりうることから、学術的意義のみならず革新的な省エネルギー技術を提供することで、社会に貢献できる。