Development of CMOS-compatible plasmonics

2020 Fiscal Year Final Research Report

• Project/Area Number: 19K22148
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 30:Applied physics and engineering and related fields
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Ikeda Kazuhiro 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長 (70541738)
• Project Period (FY): 2019-06-28 – 2021-03-31
• Keywords: プラズモニクス

Outline of Final Research Achievements

Numerical analysis was performed for the long-range surface plasmon mode on aluminum, which is commonly used in silicon photonics. Even if the vertical asymmetry due to the wafer structure was introduced, the existence of a long-range propagation mode in which the plasmon modes at the left and right edge interfaces of the thin film were symmetrically coupled was confirmed.
An interlayer connection structure between the newly found long-range plasmon mode and the silicon waveguide was designed by numerical calculation. It was proved that it is possible to transfer from the plasmon mode on the aluminum thin film to the silicon waveguide mode with high efficiency (~ 2 dB) even if a wide gap of 1 um is set by adopting a vertical directional coupler.

Free Research Field

シリコンフォトニクス

Academic Significance and Societal Importance of the Research Achievements

CMOS互換であるアルミニウムを用いて、シリコンフォトニクスに活用できる長距離伝搬プラズモンモードを見出した。また、これを活用するために、シリコン光導波路と低損失で接続できる光接続構造を見出した。これによって、光通信容量の急増を支えるシリコンフォトニクスデバイスの更なる高機能化・小型化に向けた新たなデバイス構造等の可能性が拓かれた。