Crystal growth of InN semiconductor for high performance pn junction diodes

2020 Fiscal Year Final Research Report

• Project/Area Number: 19K22228
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 36:Inorganic materials chemistry, energy-related chemistry, and related fields
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Matsuzaki Kosuke 東京工業大学, 元素戦略研究センター, 特任助教 (40571500)
• Project Period (FY): 2019-06-28 – 2021-03-31
• Keywords: 窒化物合成 / 薄膜

Outline of Final Research Achievements

We have investigated a high-quality nitride synthesis of InN. We proposed and demonstrated a direct nitriding method that enables the synthesis of nitrides directly from metal precursors, which was difficult with conventional chemical reactions. In the low temperature region where the In metal thin film cannot be nitrided by NH3, the direct nitriding method adding a small amount of oxygen to NH3 can convert the In metal to InN partially. In addition, we found pure InN can be obtained using CO2 with weak oxidizing power and the nitriding temperature was lowered.

Free Research Field

無機材料

Academic Significance and Societal Importance of the Research Achievements

Inを含む窒化物半導体はLEDや太陽電池として長く検討されているが、InとNの反応性が著しく低いため、高品質な結晶育成ができない。これまで知られているプラズマや熱分解で活性化される窒素化学種を用いない窒化法として、本提案の合成法をInNの結晶成長に適応することで、ナローギャップのIII-V族窒化物半導体の新領域が開拓される。