Application of Liquid-Phase-Deposited Cerium Oxide Films to Resistive Switching Memory and Low-Voltage Operation by Controlling Film Structure

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K23571
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0401:Materials engineering, chemical engineering, and related fields
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Kubota Yuta 東京工業大学, 物質理工学院, 助教 (80851279)
• Project Period (FY): 2019-08-30 – 2022-03-31
• Keywords: 酸化セリウム膜 / ガスアシスト液中成膜プロセス / 抵抗変化特性 / 膜構造制御 / アニオン添加

Outline of Final Research Achievements

Cerium oxide films for resistive switching memory materials were prepared using a Gas-assisted Liquid Phase Deposition process that can fabricate oxide films at temperatures as low as 60°C. The films were fabricated by adding surfactants or anions to the starting materials solution to control the film structure for low-voltage operation. As a result, the anion addition changed the film structure while maintaining the film's deposition property on the substrate. However, leakage occurred in the fabricated film, and the low voltage of resistance change could not be confirmed. These results indicated that it is possible to control the film structure for low-voltage operation although there is a need for further investigation of additives.

Free Research Field

無機材料化学

Academic Significance and Societal Importance of the Research Achievements

固液界面全域で機能性酸化物膜を60℃程度の低温で作製可能なガスアシスト液中成膜プロセスにおいて、機能性をより高めるために重要な膜構造の変化がアニオン添加により可能であることが示された。固液界面全域や60℃程度の低温で機能性をより高めた酸化物膜が作製可能なことは、今後、多孔質体等の三次元構造体やフレキシブルな低耐熱性樹脂基板等に新たな機能を比較的簡便に付与できることを示しており、本研究成果はそれら研究への足掛かりとなる学術的意義を有する。