2012 Fiscal Year Final Research Report
Nano-structure Control of Cu Interconnects by a Very High Purity Plating Processes and Its Application to Next-generation LSIs.
| Project/Area Number |
20226014
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | Ibaraki University |
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Principal Investigator |
ONUKI Jin 茨城大学, 工学部, 教授 (70315612)
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| Co-Investigator(Kenkyū-buntansha) |
MIMURA Koji 東北大学, 多元物質科学研究所, 准教授 (00091752)
ISHIKAWA Nobuhiro 独立行政法人物質・材料研究機構, 主任研究員 (00370312)
KONDO Kazuo 大阪府立大学, 工学研究科, 教授 (50250478)
INAMI Takashi 茨城大学, 工学部, 講師 (20091853)
CHONAN Yasunori 秋田県立大学, システム科学技術学部, 助教 (30363740)
ITO Shinji 独立行政法人物質・材料研究機構, 主任研究員 (50370317)
UCHIKOSHI Masahito 東北大学, 多元物質科学研究所, 助教 (60447191)
OHTA Hiromichi 茨城大学, 工学部, 教授 (70168946)
NAGANO Takatoshi 茨城大学, 工学部, 講師 (70343621)
KIMURA Takashi 独立行政法人物質・材料研究機構, 主任研究員 (70370319)
SASAJIMA Yasushi 茨城大学, 工学部, 教授 (80187137)
AOYAMA Takashi 秋田県立大学, システム科学技術学部, 教授 (80363737)
TASHIRO Suguru 茨城大学, 工学部, 講師 (90272111)
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| Project Period (FY) |
2008 – 2012
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| Keywords | 電子 / 情報材料 |
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| Research Abstract |
Grain sizes and their distribution in very narrow Cu wires (≦50nm) have a crucial influence on device performances and reliabilities of LSIs. This is because the average grain size in Cu wires becomes smaller for narrower wires and especially. Very fine grains causes substantial resistivity increase and reliability degradation of Cu wires. In order to reduce resistivity and raise reliability, with the final goal being to enhance LSI performance, we have investigated the purification process of Cu wires using high-purity plating materials and little additives and gotten Cu wires with more than 30% lower resistivity than those made with conventional purity plating materials.
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[Remarks] 新聞発表2件(日刊工業新聞)
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[Remarks] 解説記事2件
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