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2010 Fiscal Year Final Research Report

Spin blockade from spin channel to quantum dots and its application to qubit

Research Project

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Project/Area Number 20241033
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionHokkaido University

Principal Investigator

YOH Kanji  北海道大学, 量子集積エレクトロニクス研究センター, 教授 (60220539)

Co-Investigator(Kenkyū-buntansha) SUEOKA Kazuhisa  北海道大学, 情報科学研究科, 教授 (60250479)
NAKAZATO Hiromichi  早稲田大学, 理工学術院, 教授 (00180266)
Project Period (FY) 2008 – 2010
Keywordsスピントランジスタ / スピン注入 / スピントロニクス / 量子計算 / 量子ドット / 量子もつれ
Research Abstract

We have investigated surface reaction of Fe electrode and InAs substrate by thermodynamic calculation. We have fabricated a spin transistors with Fe electrode and verified current oscillation which agreed well with theoretical calculation. We have also fabricated an InAs nanowire spin transistor based on Au colloid and observed current oscillation which is presumably originates from spin-orbit interaction. In a spintransistor/quantum dot hybrid structure, we have theoretically demonstrated that spin polarization of 40% would be hard to verify quantum entanglement, but it would be appreciably large signal with 60% spin polarization and clear entanglement would be observable with 80% spin polarization in the spin channel.

  • Research Products

    (41 results)

All 2011 2010 2009 2008

All Journal Article (20 results) (of which Peer Reviewed: 20 results) Presentation (20 results) Book (1 results)

  • [Journal Article] Growth rate enhancement of InAs nanowire by molecular beam epitaxy2011

    • Author(s)
      J. Bubesh Babu and Kanji Yoh
    • Journal Title

      J. Crystal Growth

      Volume: 322 Pages: 10-14

    • Peer Reviewed
  • [Journal Article] Fabrication of p-n-p graphene structure and observation of current oscillation2011

    • Author(s)
      Keita Konishi and Kanji Yoh
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 06GF13

    • Peer Reviewed
  • [Journal Article] Thermal stability of Pd Gate in Pseudomorphic InGaAs Heterostructures2011

    • Author(s)
      Tomotsugu Ishikura, Zhixin Cui, Takashi Matsuda and Kanji Yoh
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 06GF19

    • Peer Reviewed
  • [Journal Article] Proposal of Graphene Bandgap Control by Hexagonal Network Formation2011

    • Author(s)
      Liumin Zou, Keita Konishi, and Kanji Yoh
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 06GF14

    • Peer Reviewed
  • [Journal Article] Effect of strain on the Dresselhaus effect of InAs-based heterostructures2011

    • Author(s)
      Takashi Matsuda and Kanji Yoh
    • Journal Title

      J. Crystal Growth

      Volume: 323 Pages: 52-55

    • Peer Reviewed
  • [Journal Article] Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy2011

    • Author(s)
      J. Bubesh Babu, Kanji Yoh
    • Journal Title

      J. Crystal Growth

      Volume: 323 Pages: 301-303

    • Peer Reviewed
  • [Journal Article] SiC上のエピタキシャルグラフェンの成長と電子輸送特性2010

    • Author(s)
      陽完治、小西敬太
    • Journal Title

      日本結晶成長学会誌

      Volume: Vol.37, No.3 Pages: 214-219

    • Peer Reviewed
  • [Journal Article] Evolution of pyramid morphology during InAs(001) homoepitaxy2010

    • Author(s)
      J. Bubesh Babu and Kanji Yoh
    • Journal Title

      Appl. Phys. Lett

      Volume: 97

    • Peer Reviewed
  • [Journal Article] Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide2010

    • Author(s)
      Keita Konishi, Kanji Yoh
    • Journal Title

      Physica E

      Volume: 42 Pages: 2792-2795

    • Peer Reviewed
  • [Journal Article] Possible Sign Reversal of Rashba Coefficient in InAs-based Heterostructures2010

    • Author(s)
      Takashi Matsuda and Kanji Yoh
    • Journal Title

      Physica E

      Volume: 42 Pages: 979-983

    • Peer Reviewed
  • [Journal Article] Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC2009

    • Author(s)
      Kanji Yoh, Keita Konishi, Hiroki Hibino
    • Journal Title

      IEEE 9th IEEE Conference on Nanotechnolog

      Pages: 334-336

    • Peer Reviewed
  • [Journal Article] Thermodynamic Calculation of Phase Equilibria in As-Fe-In Ternary System Based on CALPHAD Approach2009

    • Author(s)
      M. Ohno and K. Yoh
    • Journal Title

      Materials Transactions

      Volume: Vol.50 Pages: 1202-1207

    • Peer Reviewed
  • [Journal Article] State Tomography of a Chain of Qubits Embedded in a Spin Field-Effect Transistor via Repeated Spin Blockade Measurements on the Edge Qubit2009

    • Author(s)
      Kazuya Yuasa, Koske Okano, Hiromichi Nakazato, Saori Kashiwada and Kanji Yoh
    • Journal Title

      Phys. Rev. B

      Volume: 79

    • Peer Reviewed
  • [Journal Article] Extractionof a Squeezed State in a Field Mode via Repeated Measurements on an Auxiliary Quantum Particle2009

    • Author(s)
      Bruno Bellomo, Giuseppe Compagno, Hiromichi Nakazato, Kazuya Yuasa
    • Journal Title

      Phys. Rev. A

      Volume: 80

    • Peer Reviewed
  • [Journal Article] State Tomography of a Qubit through Scattering of a Probe Qubit2009

    • Author(s)
      Antonella De Pasquale, Kazuya Yuasa, Hiromichi Nakazato
    • Journal Title

      Phys. Rev. A

      Volume: 80

    • Peer Reviewed
  • [Journal Article] Entanglement Generation by Qubit Scattering in Three Dimensions2009

    • Author(s)
      Yuichiro Hida, Hiromichi Nakazato, Kazuya Yuasa, Yasser Omar
    • Journal Title

      Phys. Rev. A

      Volume: 80

    • Peer Reviewed
  • [Journal Article] Enhancement of Spin-Orbit Interaction by Bandgap Engineering in InAs-Based Heterostructures2008

    • Author(s)
      Takashi Matsuda and Kanji Yoh
    • Journal Title

      J. Electronic Materials

      Volume: 37 Pages: 1806-1810

    • Peer Reviewed
  • [Journal Article] Thermodynamic modeling of As-Fe system combined with first-principles total energy calculations2008

    • Author(s)
      Munekazu Ohno and Kanji Yoh
    • Journal Title

      J. Crystal Growth

      Volume: 310 Pages: 2751-2759

    • Peer Reviewed
  • [Journal Article] Time-resolved and space-resolved Monte-Carlo analyses on spin relaxation anisotropy in InAs heterostructure2008

    • Author(s)
      M. Ohno and K. Yoh
    • Journal Title

      Physica E

      Volume: 40 Pages: 1539-1541

    • Peer Reviewed
  • [Journal Article] Datta-Das type Spin-Field-Effect Transistor in Non-Ballistic Regime2008

    • Author(s)
      Munekazu Ohno and Kanji Yoh
    • Journal Title

      Phys. Rev. B

      Volume: 77

    • Peer Reviewed
  • [Presentation] Fabrication of Spin Transistors Based on InAs Nanowire2010

    • Author(s)
      Zhixin Cui, Keita Konishi, Tomotsugu Ishikura, Bubesh Babu, Kanji Yoh
    • Organizer
      Micoprocess and Nanostructure Conference (MNC 2010)
    • Place of Presentation
      Kokura, Japan
    • Year and Date
      20101109-12
  • [Presentation] Electrical Characterization of Pd Gate InAs-based Heterostructure2010

    • Author(s)
      Tomotsugu Isikura, Zhixin Cui ,Takashi Matsuda and Kanji Yoh
    • Organizer
      Micoprocess and Nanostructure Conference (MNC 2010)
    • Place of Presentation
      Kokura, Japan
    • Year and Date
      20101109-12
  • [Presentation] Fabrication of p-n-p graphene structure and observation of current oscillation2010

    • Author(s)
      Keita Konishi and kanji Yoh
    • Organizer
      Micrprocess and Nanostructure Conference (MNC 2010)
    • Place of Presentation
      Kokura, Japan
    • Year and Date
      20101109-12
  • [Presentation] Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy2010

    • Author(s)
      J. Bubesh Babu and Kanji Yoh
    • Organizer
      International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      20100823-27
  • [Presentation] Strain Effect on the Dresselhaus Effect of InAs-based Heterostructures2010

    • Author(s)
      Takashi Matsuda and Kanji Yoh
    • Organizer
      International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      20100823-27
  • [Presentation] Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC2009

    • Author(s)
      Keita Konishi, Hiroki Hibino, Kanji Yoh
    • Organizer
      IEEE 9th IEEE Conference on Nanotechnology
    • Place of Presentation
      Genova, Italy
    • Year and Date
      20090726-30
  • [Presentation] Transport characteristics of a single-layer graphene field-effect transistor on 4H silicon carbide2009

    • Author(s)
      Keita Konishi and Kanji Yoh
    • Organizer
      14^<th> International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Kobe, Japan
    • Year and Date
      20090719-20
  • [Presentation] Possible Sign Reversal of Rashba Coefficient in InAs-based Heterostructures2009

    • Author(s)
      Takashi Matsuda, Kanji Yoh
    • Organizer
      14^<th> International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Kobe, Japan
    • Year and Date
      20090719-20
  • [Presentation] 「スピン注入のためのマグネタイト半導体ハイブリッド構造の作製」2009

    • Author(s)
      江尻剛士、J.バベシュバブ、陽完治
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      20090330-0402
  • [Presentation] 半絶縁性4H-SiC基板上に作製したグラフェンFET(2)2009

    • Author(s)
      小西敬太、陽完治、日比野浩樹
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      20090330-0402
  • [Presentation] Fabrication and characterization of graphene transistor on SiC2009

    • Author(s)
      Kanji Yoh and Keita Konishi
    • Organizer
      2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      20090302-03
  • [Presentation] Fabrication of magnetite/InAs heterostructure and application for spin injection2009

    • Author(s)
      Takeshi Ejiri, J.Bubesh Babu, Keita Konishi and Kanji Yoh
    • Organizer
      2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      20090302-03
  • [Presentation] 200Top-gated Graphene FET Formed on Semi-insulting 4H-SiC2009

    • Author(s)
      Keita Konishi, Kanji Yoh, Hiroki Hibino
    • Organizer
      2009 RCIQE International Seminar on Advanced Semiconductor Materials and Devices
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      20090302-03
  • [Presentation] Fabrication and Characterization of Graphene Transistors grown on SiC (Invited)2009

    • Author(s)
      Kanji Yoh
    • Organizer
      Okazaki Conference From Aromatic Molecules to Graphene : hemistry, Physics and Device Applications
    • Place of Presentation
      Institute of Molecular Science, Okazaki
    • Year and Date
      20090221-23
  • [Presentation] Non-equilibrium Transport Issues on Graphene Field-Effect, Current saturation and Spin transport (Invited)2008

    • Author(s)
      Kanji Yoh
    • Organizer
      International Symposium on Graphene Devices : Technology, Physics and Modeling
    • Place of Presentation
      University of Aizu
    • Year and Date
      20081117-19
  • [Presentation] Observation of 6 micrometer long spin transport in a graphene multilayers2008

    • Author(s)
      Kanji Yoh and Keita Konishi
    • Organizer
      the 2^<nd> IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      Kyoto University
    • Year and Date
      20081020-22
  • [Presentation] Anomalous Rashba Effect in Double Cladding InAs-Based Quantum Well2008

    • Author(s)
      Takashi Matsuda and Kanji Yoh
    • Organizer
      the 2^<nd>IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      Kyoto University
    • Year and Date
      20081020-22
  • [Presentation] On the Critical Conditions for Successful Operation of Datta-Das-type Spin Transistor at Room Temperature (招待講演)2008

    • Author(s)
      Kanji Yoh
    • Organizer
      日本磁気学会第32回学術講演会シンポジウム「Integration of Metallic and Semiconductor Systems in Spin Electronics」
    • Place of Presentation
      東北学院大学
    • Year and Date
      20080912-15
  • [Presentation] グラフェン単層膜におけるSchubnikov de Haas振動2008

    • Author(s)
      小西敬太、松田喬、陽完治
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      20080902-05
  • [Presentation] InAs系HEMT構造中のスピン軌道相互作用のゲート電圧依存性とその測定2008

    • Author(s)
      松田喬、小西敬太、陽完治
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      20080902-05
  • [Book] カーボンナノチューブ・グラフェンハンドブック2011

    • Author(s)
      陽完治
    • Publisher
      コロナ社

URL: 

Published: 2013-07-31  

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