Silicon Single-Dopant Electronics

2010 Fiscal Year Self-evaluation Report

• Project/Area Number: 20241036
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: NTT Basic Research Laboratories
• Principal Investigator: ONO Yukinori NTT Basic Research Laboratories, 量子電子物性研究部, 主幹研究員 (80374073)
• Project Period (FY): 2008 – 2011
• Keywords: シングルドーパント / 単一電子制御

Research Abstract

「シングルドーパントエレクトロニクス」とは、量子ドット(artificial atom)を、ドーパントの局在準位(true atom)に置き換えることにより、新物性、新機能を実現しようとするものである。人工原子と異なりその電気的特性が加工精度に依存しないというメリットがあり、大きな波及効果が期待できる。本研究は、シリコントランジスタ中のドナー(あるいはアクセプター)の位置同定、及びドーパントレベルを用いた新しい素子の開発を目指している。

Research Products

• [Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor-field-effect transistors (2011)
  • Author(s): J.Noborisaka, K.Nishiguchi, Y.Ono, H.Kageshima, A.Fujiwara
  • Journal Title: Appl.Phys.Lett. Vol.98 Pages: "033503-1"-"033503-3"
  • Peer Reviewed
• [Journal Article] Single-electron transport through single dopants in a dopant-rich environment (2010)
  • Author(s): M.Tabe, D.Moraru, M.Ligowski, M.Anwar,R.Jablonski, Y.Ono, T.Mizuno
  • Journal Title: Phys.Rev.Lett. Vol.105 Pages: "016803-1"-"016803-4"
  • Peer Reviewed
• [Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors (2009)
  • Author(s): M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
  • Journal Title: Appl.Phys.Lett. Vol.94 Pages: "223501-1"-"223501-3"
  • Peer Reviewed
• [Journal Article] First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si (2008)
  • Author(s): S.Yabuuchi, H.Kageshima, Y.Ono, M.Nagase, A.Fujiwara, E.Ohta
  • Journal Title: Phys.Rev.B Vol.78 Pages: "045307-1"-"045307-7"
• [Presentation] Single dopant effects in silicon nano transistors (2010)
  • Author(s): Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
  • Organizer: Single Dopant Control
  • Place of Presentation: Leiden, Netherlands(招待講演)
  • Year and Date: 20100329-20100401
• [Presentation] Single dopant effects in silicon nano transistors (2010)
  • Author(s): Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
  • Organizer: 2010 International Symposium on Atom-scale Silicon HybridNanotechnologies for 'More-than-Moore'& 'Beyond CMOS' Era
  • Place of Presentation: Southampton, UK(招待講演)
  • Year and Date: 20100301-20100302
• [Presentation] Identification of single dopants in nanowire MOSFETs (2009)
  • Author(s): Y.Ono, M.Khalafalla, S.Horiguchi, K.Nishiguchi, A.Fujiwara
  • Organizer: 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: Sendai(招待講演)
  • Year and Date: 20091007-20091009
• [Presentation] Single-dopant effect in Si MOSFETs (2008)
  • Author(s): Y.Ono, M.Khalafalla, A.Fujiwara, K.Nishiguchi, K.Takashina, S.Horiguchi, Y.Takahashi, H.Inokawa
  • Organizer: IEEE Nanotechonology Materials and Devices Conference 2008
  • Place of Presentation: Kyoto(招待講演)
  • Year and Date: 20081020-20081022
• [Presentation] Single boron detection in nano-scale SOI MOSFETs (2008)
  • Author(s): Y.Ono
  • Organizer: The 2008 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Osaka, Japan(招待講演)
  • Year and Date: 20080522-20080523
• [Book] Device Applications of Silicon Nanocrystals and Nanostructures(Silicon Single-Electron Devices) (2009)
  • Author(s): Y.Takahashi, Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa
  • Total Pages: 125-172
  • Publisher: Springer
• [Book] Information Technology II (volume 4) of Nanotechnology(Single-electron transistor and its logic application) (2008)
  • Author(s): Y.Ono, K.Nishiguchi, H.Inokawa, Y.Takahashi, A.Fujiwara
  • Publisher: Wiley-VCH Verlag