2011 Fiscal Year Final Research Report
Silicon Single-Dopant Electronics
| Project/Area Number |
20241036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
ONO Yukinori 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 (80374073)
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| Co-Investigator(Kenkyū-buntansha) |
TSUCHIYA Toshiaki 島根大学, 総合理工学部, 教授 (20304248)
HORIGUCHI Seiji 工学資源学研究科, 教授 (60375219)
NISHIGUCHI Katsuhiko 日本電信電話株式会社NTT物性科学基礎研究所, 特別研究員 (00393760)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI Toru 日本電信電話株式会社NTT物性科学基礎研究所, 主任研究員 (30393763)
MOHAMMED Khalafalla 日本電信電話株式会社NTT物性科学基礎研究所, 研究員 (70463627)
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| Project Period (FY) |
2008 – 2011
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| Keywords | シングルドーパント / 単一電子制御 |
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| Research Abstract |
In this project, we aim at the realization of technologies that enable us to manipulate single charges and spins, by using a true atom, or, dopant in silicon, rather than by using an artificial atoms, or quantum dots. Here, we established the way of identifying the position of individual dopants in a transistor and also clarified how each dopant had an impact on the transistor characteristics. In addition, we realized the "atom device" that controls motion of single charges by using a dopant embedded in silicon.
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[Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller(better) than in metal-based ones : Two-level fluctuator stability2008
Author(s)
N. M. Zimmerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa, M. Furlan, M. W. Keller
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Journal Title
J. Appl. Phys
Volume: Vol.104, No.
Pages: 033710_1-12
Peer Reviewed
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