2010 Fiscal Year Final Research Report
Development of next generation far-infrared detector
| Project/Area Number |
20244016
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Astronomy
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| Research Institution | Japan Aerospace Exploration Agency |
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Principal Investigator |
WADA Takehiko Japan Aerospace Exploration Agency, 宇宙科学研究所, 助教 (50312202)
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| Co-Investigator(Kenkyū-buntansha) |
KANEDA Hidehiro 名古屋大学, 理学研究科, 准教授 (30301724)
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| Co-Investigator(Renkei-kenkyūsha) |
HIROSE Kazuyuki 宇宙航空研究開発機構, 宇宙科学研究本部, 准教授 (00280553)
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| Research Collaborator |
WATANABE Kentaroh 東京大学, 先端科学技術研究センター, 特任助教
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| Project Period (FY) |
2008 – 2010
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| Keywords | 赤外線天文学 / 分子線エピタキシー / 表面活性化常温接合 / 赤外線検出器 |
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| Research Abstract |
We have developed germanium BIB detector for future mid- and far-infrared astronomical missions. In order to obtain clear interface between blocking and IR active layers, we have tested two new methods, surface activated bonding (SAB) and molecular beam epitaxial (MBE) crystal growth. We have fabricated a germanium BIB detector with SAB technique bonding a pure wafer (carrier concentration <8x10^12/cc) and a highly doped wafer (Ga 10^16/cc) and found that that device had a typical I-V characteristic for BIB detector, extended cut-off wavelength, and reduction of dark current. We have also achieved a high-purity germanium crystal growth on a high doped wafer with MBE technique that have a carrier concentration low enough for a blocking layer in BIB detector (5x10^14/cc).
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[Journal Article] Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors2009
Author(s)
Nagata, H., Wada, T., Ikeda, H., Arai, Y., Ohno, M.
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Journal Title
AIPC 1185巻
Pages: 286-289, DOI : 10.1063/1.3292335
Peer Reviewed
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