2010 Fiscal Year Final Research Report
Research and Development of silicon semiconductor detector technologies for measuring momentum in very high radiation environments
| Project/Area Number |
20244038
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
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| Research Institution | High Energy Accelerator Research Organization |
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Principal Investigator |
UNNO Yoshinobu High Energy Accelerator Research Organization, 素粒子原子核研究所, 准教授 (40151956)
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| Co-Investigator(Kenkyū-buntansha) |
TERADA Susumu 高エネルギー加速器研究機構, 素粒子原子核研究所, 講師 (70172096)
IKEGAMI Yoichi 高エネルギー加速器研究機構, 素粒子原子核研究所, 研究機関講師 (20222862)
KORIKI Takashi 高エネルギー加速器研究機構, 素粒子原子核研究所, 先任技師 (20391732)
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| Co-Investigator(Renkei-kenkyūsha) |
HARA Kazuhiko 筑波大学, 大学院・数理物質科学研究科物理学専攻, 講師 (20218613)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 粒子測定技術 |
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| Research Abstract |
Technologies for highly radiation tolerant p-type silicon semiconductor position measuring detectors are established. Silicon microstrip sensors were evaluated up to a flunece of 10**15 1-MeV neutrons-equivalent (neq)/cm**2 and pixel sensors to 10**16. Irradiation dependence of various structures and charge collection were demonstrated. Optimization of structures in detail with hot electron analyses and TCAD simulation achieved holding 1 kV bias voltage before irradiation. New, high-density, high-thermal conductivity and light-weight hybrids were fabricated and double-side modules were constructed and thermal and electrical performance was evaluated.
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