2010 Fiscal Year Final Research Report
Low temperature fabrication of Si02/SiC structure by use of surface nanopores formed by nitric acid oxidation method
| Project/Area Number |
20246005
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
KOBAYASHI Hikaru Osaka University, 産業科学研究所, 教授 (90195800)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MATSUMOTO Taketoshi 大阪大学, 産業科学研究所, 助教 (20390643)
YAMAGUCHI Shunro 大阪大学, 産業科学研究所, 助教 (40167698)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Keywords | SiC / SiO2 / 低温酸化 / MOS / 硝酸酸化 / リーク電流 / 水素処理 / 界面準位 |
|---|
| Research Abstract |
We have developed a method of low temperature formation by use of nitric acid oxidation method. 3C-SiC surfaces can be atomically flattened by hydrogen treatment at 400℃, and SiO_2/SiC structure with good electrical characteristics can be formed by two-step nitric acid oxidation method using 40 and 68wt% HNO_3 solutions below 120℃. The leakage current density flowing through SiO_2 is high with no hydrogen treatment, but it can be decreased by approximately six orders of magnitude using the hydrogen treatment. We have also fabricated SiO_2/4H-SiC structure by use of nitric acid vapor oxidation method at 600℃. The oxidation proceeds only from step edges, and the initial oxidation rate for C-face is 2.8 times higher than that for Si-face. For the Si-face, SiOC species is formed at the interface, while it is not present for the C-face.
|
