2010 Fiscal Year Final Research Report
Laser Crystallization of non two-dimensional Si substrates and their device application
| Project/Area Number |
20246006
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
URAOKA Yukiharu Nara Institute of Science and Technology, 物質創成科学研究科, 教授 (20314536)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Mutsumi 龍谷大学, 理工学部, 教授 (60368032)
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| Co-Investigator(Renkei-kenkyūsha) |
FUYUKI Takashi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (10165459)
HATAYAMA Tomoaki 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (90304162)
YANO Hiroshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (40335485)
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| Project Period (FY) |
2008 – 2010
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| Keywords | レーザ結晶化 / 薄膜トランジスタ / 薄膜フォトダイオード / 三次元デバイス / ディスプレイ |
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| Research Abstract |
We crystallized one dimensional or three dimensional silicon thin film and applied this method to the fabrication of thin film transistors or thin film photo diodes. We demonstrated the effectiveness of this technique by operating high functional devices. This method is promising for the realization of next generation information devices.
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