Research on Physics and Chemistry of ZnO and its related alloy crystal wafers aiming to utilization of ZnO based devices

2010 Fiscal Year Final Research Report

• Project/Area Number: 20246007
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: OHASHI Naoki National Institute for Materials Science, 光材料センター, センター長 (60251617)
• Co-Investigator(Kenkyū-buntansha): SAKAGUCHI Isao 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (20343866) ; WADA Yoshiki 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (90343847) ; HANEDA Hajime 独立行政法人物質・材料研究機構, センサ材料センター, センター長 (70354420) ; ADACHI Yutaka 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (30354418) ; ISHIGAKI Takamasa 法政大学, 生命科学部, 教授 (40343842) ; OGAKI Takeshi 独立行政法人物質・材料研究機構, センサ材料センター, 研究員 (80408731)
• Co-Investigator(Renkei-kenkyūsha): YOSHIKAWA Hideki 独立行政法人物質・材料研究機構, 共用ビームステーション, 主幹研究員 (20354409) ; UEDA Shigenori 独立行政法人物質・材料研究機構, 共用ビームステーション, 研究員 (20360505)
• Project Period (FY): 2008 – 2010
• Keywords: 酸化亜鉛 / ウエファー / 精密研磨 / 圧電特性 / エピタキシャル成長

Research Abstract

Surface planarization process was optimized for device application of (Zn, Mg)O alloy wafers and physical properties of the wafers were evaluated for realistic designing of (Zn, Mg)O based devices.

Research Products

• [Journal Article] Defects in ZnO Transparent Conductors Studied by Capacitance Transients at ZnO/Si Interface (2011)
  • Author(s): B.Li, Y.Adachi, J.Li, H.Okushi, I.Sakaguchi, S.Ueda, H.Yoshikawa, Y.Yamashita, S.Senju, K.Kobayashi, M.Sumiya, H.Haneda, N.Ohashi
  • Journal Title: Appl.Phys.Lett. 98巻 Pages: 082101
  • Peer Reviewed
• [Journal Article] Effect of Post-Annealing on Structural and Optical Properties, and Elemental Distribution in Heavy Eu-Implanted ZnO Thin Films (2010)
  • Author(s): I.Sakaguchi, T.Ohgaki, Y.Adachi, S.Hishita, N.Ohashi, H.Haneda
  • Journal Title: J.Ceram.Soc.Jpn. 118巻 Pages: 1087-1089
  • Peer Reviewed
• [Journal Article] ZnO-Based Visible-Light Photocatalyst Band-Gap Engineering and Multi-Electron Reduction by Co-catalyst (2010)
  • Author(s): S.Anandan, N.Ohashi, M.Miyauchi
  • Journal Title: Appl.Catal.B 100巻 Pages: 502-509
  • Peer Reviewed
• [Journal Article] Correlation Between Film Thickness and Zinc Defect Distribution along the Growth Direction in an Isotopic Multilayer ZnO Thin Film Grown By Pulsed Laser Deposition Analyzed Using the Internal Diffusion Method (2010)
  • Author(s): K.Matsumoto, Y.Adachi, T.Ohgaki, N.Ohashi, H.Haneda, I.Sakaguchi
  • Journal Title: Solid State Commun. 150巻 Pages: 43-44
  • Peer Reviewed
• [Journal Article] Oxygen Tracer Diffusion in Magnesium-doped ZnO Ceramics (2010)
  • Author(s): I.Sakaguch, K.Matsumoto, T.Ohgaki, Y.Adachi, K.Watanabe, N.Ohashi, H.Haneda
  • Journal Title: J.Ceram.Soc.Jpn 118巻 Pages: 362-365
  • Peer Reviewed
• [Journal Article] Ion Implantation and Diffusion Behavior of Silver in Zinc Oxide (2010)
  • Author(s): I.Sakaguchi, K.Watanabe, T.Ohgaki, T.Nakagawa, S.Hishita, Y.Adachi, N.Ohashi, H.Haneda
  • Journal Title: J Ceram.Soc.Jpn 118巻 Pages: 217-219
  • Peer Reviewed
• [Journal Article] Properties of Gallium- and Aluminum-doped Bulk ZnO Obtained from Single-Crystals Grown by Liquid Phase Epitaxy (2009)
  • Author(s): J.Kobayashi, N.Ohashi, H.Sekiwa, I.Sakaguchi, M.Miyamoto, Y.Wada, Y.Adachi, K.Matsumoto, H.Haneda
  • Journal Title: J.Cryst.Growth 311巻 Pages: 4408-4413
  • Peer Reviewed
• [Journal Article] Structure and Electric Properties in Tin-Doped Zinc Oxide Films Synthesized by Pulsed Laser Deposition (2009)
  • Author(s): S.Venkataraj, S.Hishita, Y.Adachi, I.Sakaguchi, K.Matsumoto, N.Saito, H.Haneda, N.Ohashi
  • Journal Title: J.Electrochem.Soc. 156巻 Pages: H424-H429
  • Peer Reviewed
• [Journal Article] Polarity-Dependent Photoemission Spectra of Wurtzite-type Zinc Oxide (2009)
  • Author(s): N.Ohashi, Y.Adachi, T.Ohsawa, K.Matsumoto, I.Sakaguchi, H.Haneda, S.Ueda, H.Yoshikawa, K.Kobayashi
  • Journal Title: Appl.Phys.Lett. 94巻 Pages: 122102
  • Peer Reviewed
• [Journal Article] Growth of Bulky Single Crystalline Films of (Zn,Mg)O Alloy Semiconductors by Liquid Phase Epitaxy (2009)
  • Author(s): J.Kobayashi, H.Sekiwa, M.Miyamoto, I.Sakaguchi, Y.Wada, T.Sekiguchi, Y.Adachi, H.Haneda, N.Ohashi
  • Journal Title: Cryst.Growth & Design 9巻 Pages: 1219-1224
  • Peer Reviewed
• [Journal Article] Formation of Compensated Defects in Zinc Magnesium Oxides Assignable from Diffusion Coefficients and Hard X-Ray Photoemission (2009)
  • Author(s): T.Ohsawa, I.Sakaguchi, N.Ohashi, H.Haneda, H.Ryoken, K.Matsumoto, S.Hishita, Y.Adachi, S.Ueda, H.Yoshikawa, K.Kobayashi
  • Journal Title: Appl.Phys.Lett. 94巻 Pages: 042104
  • Peer Reviewed
• [Journal Article] Electronic States in Zinc Magnesium Oxide Alloy Semiconductors : Hard X-Ray Photoemission Spectroscopy and Density Functional Theory Calculations (2009)
  • Author(s): T.Ohsawa, Y.Adachi, I.Sakaguchi, K.Matsumoto, H.Haneda, S.Ueda, H.Yoshikawa, K.Kobayashi, N.Ohashi
  • Journal Title: Chem.Mater. 21巻 Pages: 144-150
  • Peer Reviewed
• [Journal Article] Analysis of Indium Diffusion Profiles Based on the Fermi-Level Effect in Single-Crystal Zinc Oxide (2008)
  • Author(s): T.Nakagawa, K.Matsumoto, I.Sakaguchi, M.Uematsu, H.Haneda, N.Ohashi
  • Journal Title: Jpn.J.Appl.Phys. 47巻 Pages: 7848-7850
  • Peer Reviewed
• [Journal Article] Positive Hall Coefficients Obtained from Contact Misplacement on Evident n-Type ZnO Films and Crystals (2008)
  • Author(s): T.Ohgaki, N.Ohashi, S.Sugimura, H.Ryoken, I.Sakaguchi, Y.Adachi, H.Haneda
  • Journal Title: J.Mater.Res. 23巻 Pages: 2293-2295
  • Peer Reviewed
• [Presentation] ルツ鉱型ワイドギャップ半導体中の欠陥の挙動 (2010)
  • Author(s): 大橋直樹, 坂口勲, Y.Adachi, T.Ohgaki, H.Haneda
  • Organizer: 励起ナノプロセス研究会 第6回研究会
  • Place of Presentation: 堺
  • Year and Date: 20101102-20101103
• [Presentation] 酸化亜鉛表面の平坦化と加工ダメージの評価 (2010)
  • Author(s): 宮崎宏基,坂口勲,安達裕,石垣隆正,大橋直樹
  • Organizer: 第30回エレクトロセラミックス研究討論会
  • Place of Presentation: 東京
  • Year and Date: 20101029-20101030
• [Presentation] Charge Compensation in Oxide Semiconductors (2010)
  • Author(s): 大橋直樹, 安達裕, 坂口勲, B.Li, J.Li, J.Williams, K.Matsumoto, T.Ohgaki, S.Ueda, H.Yoshikawa, K.Kobayashi, H.Okushi, J.Chen, T.Sekiguchi, H.Haneda
  • Organizer: International Symposium On Compound Semiconductor 2010
  • Place of Presentation: 高松
  • Year and Date: 20100531-20100604
• [Presentation] Development of Zinc Oxide and Its Related Materials and Structures (2010)
  • Author(s): 大橋直樹
  • Organizer: Korea-Japan Joint Workshop On Semiconductor Physics
  • Place of Presentation: 大田, 韓国
  • Year and Date: 2010-04-21
• [Presentation] Hard-X-Ray Photoelectron Spectroscopy on Zinc Oxide and Its Related Alloys (2009)
  • Author(s): 大橋直樹, 安達裕, 坂口勲, K.Matsumoto, S.Ueda, H.Yoshikawa, Y.Yamashita, K.Kobayashi, H.Haneda
  • Organizer: 2009 MRS Fall Meeting
  • Place of Presentation: Boston USA
  • Year and Date: 20091130-20091204
• [Presentation] Charge Compensation and Interfacial Structure of Oxides for Electric Applications (2009)
  • Author(s): 大橋直樹
  • Organizer: Mater.Sci.& Tech.
  • Place of Presentation: Pittsburgh, USA
  • Year and Date: 20091025-20091029
• [Presentation] Electronic Structure in Zinc Oxide Studied by X-Ray Photoemission (2009)
  • Author(s): 大橋直樹, 坂口勲, 安達裕, S.Ueda, H.Yoshikawa, K.Kobayashi, K.Matsumoto, Y.Yamashita, H.Haneda
  • Organizer: STAC-3
  • Place of Presentation: 横浜
  • Year and Date: 20090616-20090618
• [Presentation] Zinc Vacancies in ZnO (2009)
  • Author(s): N.Ohashi, I.Sakaguchi, T.Nakagawa, Y. Adachi, K.Matsumoto, S.Ueda, H.Yoshikawa, K.Kobayashi, H.Haneda
  • Organizer: 8th Pacific Rim Conference On Ceramic And Glass Technology
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 20090531-20090705
• [Presentation] 酸化亜鉛セラミックス中の酸素拡散に対するマグネシウムの添加物効果 (2009)
  • Author(s): 坂口勲,中川翼,安達裕,大橋直樹,松本研司,羽田肇
  • Organizer: 日本セラミックス協会2009年年会
  • Place of Presentation: 府中
  • Year and Date: 20090316-20090318
• [Presentation] Growth and Characterization of (Zn,Mg)O Bulk and Film Crystals (2009)
  • Author(s): N.Ohashi, J.Kobayashi, H.Sekiwa, M.Miyamoto, Y.Adachi, I.Sakaguchi, Y.Wada
  • Organizer: Photonic West
  • Place of Presentation: San Jose, USA
  • Year and Date: 20090124-20090129
• [Presentation] 酸化物半導体・光学材料としての酸化亜鉛 (2009)
  • Author(s): 大橋直樹
  • Organizer: 第2回光材料・応用技術研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-08-28
• [Presentation] Structure of Polar Crystals in Terms of Crystal Growth and Functions (2008)
  • Author(s): 大橋直樹
  • Organizer: 6th Asian Meeting On Electroceramics
  • Place of Presentation: つくば
  • Year and Date: 20081022-20081024
• [Presentation] Self-Standing (Zn, Mg)O Single Crystalline Wafers Prepared by A Liquid Phase Epitaxy Method (2008)
  • Author(s): J.Kobayashi, H.Sekiwa, M.Miyamoto, I.Sakaguchi, Y.Wada, Y.Adachi, H.Haneda, N.Ohashi
  • Organizer: Fifth International Workshop On Zinc Oxide And Related Materials
  • Place of Presentation: Michigan, USA
  • Year and Date: 20080922-20080924
• [Presentation] Electronic Structure of (Zn, Mg)O Alloy Crystals Studied by Photoemission Spectroscopy Using Synchrotron Radiation (2008)
  • Author(s): T.Osawa, Y.Adachi, I.Sakaguchi, K.Matsumoto, H.Haneda, S.Ueda, H.Yoshikawa, K.Kobayashi, N.Ohashi
  • Organizer: Fifth International Workshop On Zinc Oxide And Related Materials
  • Place of Presentation: Michigan, USA
  • Year and Date: 20080922-20080924
• [Presentation] Defects in Wide Band Gap Semiconductors (2008)
  • Author(s): N.Ohashi, I.Sakaguchi, Y.Adachi,, Y.Wada, T.Ohgaki, S.Ueda, H.Yoshikawa, T.Osawa, K.Matsumoto, K.Kobayashi, H.Haneda
  • Organizer: 2nd Intl.Conf.Sci.Tech.Adv.Ceramics
  • Place of Presentation: 幕張
  • Year and Date: 20080530-20080701
• [Book] セラミックス機能化ハンドブック (2011)
  • Author(s): 大橋直樹,羽田肇(編集、執筆)
• [Book] マテリアルズインテグレーション(酸化亜鉛の欠陥構造と物性 21巻) (2008)
  • Author(s): 大橋直樹,坂口勲,石垣隆正,齋藤紀子,安達裕,羽田肇
• [Book] 工業材料(酸化亜鉛の高機能化に向けた物性制御と欠陥制御 56巻) (2008)
  • Author(s): 大橋直樹,小林純,関和秀幸
• [Patent(Industrial Property Rights)] 酸化亜鉛蛍光体とその製造法及び発光装置 (2010)
  • Inventor(s): 大橋直樹,石垣隆正,田口広之,坂口勲,羽田肇,関口隆史
  • Industrial Property Rights Holder: 独)物質・材料研究機構
  • Industrial Property Number: 特許,特許第4635184号
  • Acquisition Date: 2010-12-03
• [Patent(Industrial Property Rights)] 酸化亜鉛単結晶ウエファーの製造法 (2010)
  • Inventor(s): 大橋直樹,羽田肇,大垣武,佐藤充,前田克己,杉村茂昭
  • Industrial Property Rights Holder: 独)物質・材料研究機構,東京電波株式会社
  • Industrial Property Number: 特許,特許第4610870号
  • Acquisition Date: 2010-10-22
• [Patent(Industrial Property Rights)] ZnO単結晶の製造方法、それによって得られた自立ZnO単結晶ウエファー、並びに自立Mg含有ZnO系混晶単結晶ウエファーおよびそれに用いるMg含有ZnO系混晶単結晶の製造方法 (2009)
  • Inventor(s): 関和秀幸,小林純,坂口勲,大橋直樹
  • Industrial Property Rights Holder: 三菱瓦斯化学株式会社, 独)物質・材料研究機構
  • Patent Publication Number: 特許,特開2009-234825
  • Filing Date: 2009-03-23
• [Patent(Industrial Property Rights)] ウルツ鉱型III-V族窒化物薄膜結晶の製造法 (2009)
  • Inventor(s): 大橋直樹,羽田肇,大垣武,佐藤充,前田克己,杉村茂昭
  • Industrial Property Rights Holder: 独)物質・材料研究機構,東京電波株式会社
  • Industrial Property Number: 特許,特許第4413558号
  • Acquisition Date: 2009-11-27
• [Patent(Industrial Property Rights)] 非晶質基材 (2008)
  • Inventor(s): 安達裕,大垣武,坂口勲,大橋直樹
  • Industrial Property Rights Holder: 独)物質・材料研究機構
  • Patent Publication Number: 特許,特開2010-50342
  • Filing Date: 2008-08-22
• [Patent(Industrial Property Rights)] 酸化亜鉛基積層構造体 (2008)
  • Inventor(s): 大橋直樹,羽田肇,両見春樹,坂口勲,安達裕,竹中正
  • Industrial Property Rights Holder: 独)物質・材料研究機構
  • Industrial Property Number: 特許,特許第4210748号
  • Acquisition Date: 2008-11-07