2010 Fiscal Year Final Research Report
Si single-electron transfer devices using potential fluctuation by a few dopants
| Project/Area Number |
20246060
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shizuoka University |
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Principal Investigator |
TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
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| Co-Investigator(Kenkyū-buntansha) |
INOKAWA Hiroshi 静岡大学, 電子工学研究所, 教授 (50393757)
SATOH Hiroaki 静岡大学, 電子工学研究所, 助教 (00380113)
IKEDA Hiroya 静岡大学, 電子工学研究所, 准教授 (00262882)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 少数電子素子 / 電子デバイス・機器 / 半導体超微細化 / シリコン |
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| Research Abstract |
In this work, the following results have been obtained.(1) Even under existence of many phosphorous donors, a single donor determines sub-threshold characteristics.(2) In a device, where three phosphorous atoms determine the sub-threshold characteristics, single-electron transfer has been demonstrated.(3) By low-temperature Kelvin probe force microscopy, individual charged donors and acceptors were observed, and then potential change due to electron injection into the dopant was observed.
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