2010 Fiscal Year Final Research Report
Research on Functional Development of Atomic Switches
| Project/Area Number |
20310080
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
HASEGAWA Tsuyoshi National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, MANA主任研究者 (50354345)
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| Project Period (FY) |
2008 – 2010
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| Keywords | ナノ電子デバイス / 原子スイッチ / 学習機能 |
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| Research Abstract |
Research on functional development of atomic switches, in which formation and annihilation of a metal atom bridge between two electrodes is controlled using solid electrochemical reaction, was carried out. One of the developed functions is a learning ability that stores information without any change in the output signals until a certain number of input signals comes, then it turns the atomic switch on when the certain number of input signals comes. Volatile/nonvolatile selective operation has been also developed, in which the volatile operation loses the information with cut-off of the power supply while the nonvolatile operation keeps the information even after the cut-off of the power supply. These new functions are expected to contribute to the development of new types of computers such as neural systems.
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