2011 Fiscal Year Final Research Report
Control of carrier number and Mott criticality in strongly correlated organic conductors with molecular defects by irradiation
| Project/Area Number |
20340085
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics II
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YONEYAMA Naoki 山梨大学, 大学院・医学工学総合研究部, 助教 (80312643)
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| Project Period (FY) |
2008 – 2011
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| Keywords | 強相関電子系 / 有機導体 / 物性実験 / 低温物性 |
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| Research Abstract |
We have explored the disorder effect on the strongly correlated electron system with a bandwidth controlled metal-Mott insulator transition in the molecular dimer-Mott insulators irradiated by X-ray for introducing molecular defects. We found that Anderson localization arose with smaller disorder in approaching to the Mott critical phase transition point from both the metal and Mott insulator sides.
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