2010 Fiscal Year Final Research Report
Development of novel organic transistor materials based on new molecular design utilizing element character
| Project/Area Number |
20350092
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Organic industrial materials
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| Research Institution | Hiroshima University |
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Principal Investigator |
OHSHITA Joji Hiroshima University, 大学院・工学研究院, 教授 (90201376)
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| Co-Investigator(Kenkyū-buntansha) |
HARIMA Yutaka 広島大学, 大学院・工学研究院, 教授 (20156524)
YOSHIDA Hiroto 広島大学, 大学院・工学研究院, 准教授 (40335708)
MIZUMO Tomonobu 広島大学, 大学院・工学研究院, 助教 (90436676)
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| Co-Investigator(Renkei-kenkyūsha) |
KUNUGI Yoshihito 東海大学, 工学部, 准教授 (90243518)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 機能性有機材料 / 元素科学 / 有機半導体デバイス / 共役分子 |
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| Research Abstract |
In order to develop novel organic thin film transistor materials based on new molecular designing utilizing the characteristics of silicon element, we prepared star-burst compounds with an organosilicon core and π-conjugated wings. The thin films were prepared by vacuum deposition or spin coating and their transistor activity was investigated and the relationship between the molecular structures and the activity was demonstrated. We also studied the molecular electrnic states with respect to the spectroscopic analysis and the molecular orbital calculation and found that the transistor activity depends strongly on the degree of σ-π conjugation and stacking of the π-conjugated units.
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[Journal Article] Effects of the silicon core structures on the hole mobility of star-shaped oligothiophenes2010
Author(s)
J.Ohshita, Y.Hatanaka, S.Matsui, T.Mizumo, Y.Kunugi, Y.Honsho, A.Saeki, S.Seki, J.Tibbelin, H.Ottosson, T.Takeuchi
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Journal Title
Dalton Trans. 39
Pages: 9314-9320
Peer Reviewed
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