2010 Fiscal Year Final Research Report
Current-induced domain wall motion in ferromagnetic semiconductors
Project/Area Number |
20360001
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Tohoku University |
Principal Investigator |
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Project Period (FY) |
2008 – 2010
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Keywords | スピントロニクス |
Research Abstract |
We have investigated the domain wall related phenomena in (Ga, Mn)As and found that (1)Universality class of domain wall creep motion in (Ga, Mn)As is governed by the surface roughness (2)Electromotive force can be induced by the domain wall motion, which is a reciprocal effect of the current induced domain wall motion.
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