2010 Fiscal Year Final Research Report
Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method
| Project/Area Number |
20360011
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Doshisha University |
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Principal Investigator |
OHACHI Tadashi Doshisha University, 理工学部, 教授 (40066270)
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| Co-Investigator(Kenkyū-buntansha) |
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 准教授 (90327320)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 結晶成長 / PA-MBE / エピタキシャル / 電子・電気材料 / 半導体物性 / 原子フラックス測定 / AlNダブルバッファー層 / AM-MEE成長法 |
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| Research Abstract |
Preparation of an AlN double buffer layer (DBL) on a β-Si_3N_4 layer by the interfacial reaction between Al and the β-Si_3N_4 layer was developed by controlling two electrical discharge modes of the high frequency induction coupling electrical discharge in molecular-beam epitaxy (MBE) method. Activity modulation migration enhanced (AM-MEE) method was established as a continuous MBE method by preparing the AlN/β-Si3N4/Si DBL layer firstly. In addition, the prospect to the growth of thermodynamically metastable cubic crystals, AlN and GaN epitaxial films on Si substrates was able to be obtained by the AM-MEE method.
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