2010 Fiscal Year Final Research Report
Low Damage Thin Film Preparation with a Sputtering Method that Employs an Extremely Strong Magnetic Field
| Project/Area Number |
20360017
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya University |
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Principal Investigator |
IKUTA Hiroshi Nagoya University, 工学研究科, 教授 (30231129)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 薄膜 / スパッタ成膜法 / 強磁場 |
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| Research Abstract |
Magnetron sputtering is one of the most important thin-film preparation methods that is widely used. The sputtering efficiency depends strongly on the magnetic field that is used to confirm the plasma. We have developed a sputtering device that employs a magnetic field about 20 times larger than a conventional one. In this study, the plasma generated by this method was diagnosed, and several deposition experiments were conducted to elucidate the characteristics of this novel technique. Among other things, we found that energetic electrons are trapped in a wide region above the target because of the strong magnetic field, and that this method is advantageous for reacted sputtering. We also studied a face-to-face magnetron device, and have shown that the strong magnetic field can be more effectively utilized by this arrangement.
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