2010 Fiscal Year Final Research Report
Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation
| Project/Area Number |
20360023
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Waseda University |
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Principal Investigator |
OHDOMARI Iwao Waseda University, 理工学術院, 名誉教授 (30063720)
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| Co-Investigator(Renkei-kenkyūsha) |
TANII Takashi 早稲田大学, 理工学術院, 准教授 (20339708)
WATANABE Takanobu 早稲田大学, 理工学術院, 准教授 (00367153)
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| Project Period (FY) |
2008 – 2010
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| Keywords | ナノ構造物性 / ナノ表面・界面 / ナノ構造作製 / ナノ計測 / ナノ物性制御 |
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| Research Abstract |
A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices.
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