2011 Fiscal Year Final Research Report
Fabrication of high-quality gate oxide at low temperature by evaporation of SiO nanopowder for flexible ICs
| Project/Area Number |
20360137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
NOZAKI Shinji 電気通信大学, 大学院・情報理工学研究科, 教授 (20237837)
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| Co-Investigator(Kenkyū-buntansha) |
ONO Hiroshi 電気通信大学, 大学院・情報理工学研究科, 助教 (00134867)
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| Project Period (FY) |
2008 – 2011
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| Keywords | シリコン / 低温酸化膜 / 界面準位 / フレキシブル基板 / ゲート酸化膜 / 光酸化 / 真空蒸着 / ナノ粉末 |
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| Research Abstract |
The objective of the project is to deposit or grow the high-quality gate oxide for Si MOSFETs at temperatures of 200℃or lower. The process consisting of vacuum evaporation of SiO nanopowder, UV steam oxidation at 200℃and post metallization anneal in forming gas at 200℃has been successfully established to make the high-quality gate oxide with an interface state density of 4. 4×1011cm-2eV-1
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Research Products
(14 results)
