Study on atomic relaxation of III-N-V semiconductor

2012 Fiscal Year Final Research Report

• Project/Area Number: 20360139
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: KONDOW Masahiko 大阪大学, 大学院・工学研究科, 教授 (90403170)
• Co-Investigator(Kenkyū-buntansha): WAKAHARA Akihiro 豊橋技術科学大学, 工学部, 教授 (00230912) ; EMURA Shuichi 大阪大学, 産業科学研究所, 助教 (90127192) ; ISHIKAWA Fumitaro 大阪大学, 大学院・工学研究科, 助教 (60456994)
• Project Period (FY): 2008 – 2012
• Keywords: III-N-V 半導体

Research Abstract

III-N-V semiconductors, such as GaInNAs,are material systems of interest showing prospects for the next generation optical devices such as laser diodes. Due to the requirement of low growth temperature, the as-grown samples of III-N-V semiconductors are known to contain a quantity of defects within the crystal. Post growth annealing is then a vital technique for its application to devices. However, the phenomena induced by annealing within the material system are still well not understood. We here employ large-scale synchrotron radiation facilities for the further investigation. X-ray absorption fine structure (XAFS) is a strong tool for the analysis of local atomic structure of materials. High-resolution hard X-ray photoelectron spectroscopy (HXPES) with the larger escape depth of photoelectrons as deep as several-tens nm facilitates non-destructive studies of bulk materials, nanoscale buried layers. Comparing the electrical status and bond configuration obtained by those, we analyze the annealing effect on the atomic relaxation of GaInNAs material system.

Research Products

• [Journal Article] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study (2011)
  • Author(s): H. Nakamoto1, F. Ishikawa, M. Kondow, Y. Ohshima, A. Yabuuchi, M. Mizuno, H. Araki1, Y. Shirai
  • Journal Title: Jpn. J. Appl. Phys Volume: 50 Pages: 04DH09
  • Peer Reviewed
• [Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy (2011)
  • Author(s): F. Ishikawa, S. Fuyuno, K. Higashi, M. Kondow, M. Machida, H. Oji, J.-Y. Son, A. Trampert, K. Umeno, Y. Furukawa, and A. Wakahara
  • Journal Title: Appl. Phys. Lett. Volume: 98 Pages: 121915
  • Peer Reviewed
• [Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy (2010)
  • Author(s): K. Umeno, Y. Furukawa, N. Urakami, S. Mitsuyoshi, H. Yonezu, A. Wakahara, F. Ishikawa, and M. Kondow
  • Journal Title: J.Vac. Sci.& Tech B Volume: 28 Pages: C3B22
  • Peer Reviewed
• [Journal Article] Epitaxial Lift-off for Sample Preparation of X-ray Absorption Fine Structure (2010)
  • Author(s): K. Higashi, F. Ishikawa, K. Handa, S. Emura, and M. Kondow
  • Journal Title: Rev. Sci. Inst. Volume: 81 Pages: 143903
  • Peer Reviewed
• [Journal Article] Infrared Absorption Spectrum of InNP (2010)
  • Author(s): M. Kondow, F. Ishikawa, K. Umeno, Y. Furukawa, and A. Wakahara
  • Journal Title: Appl. Phys. Exp. Volume: 3 Pages: 011001
  • Peer Reviewed
• [Presentation] Annealing effect on (Ga,In)(N,As) investigated by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure (2012)
  • Author(s): S. Fuyuno, F. Ishikawa, K. Higashi, A. Kinoshita, M. Morifuji, M. Kondow, H. Oji, J.-Y.Son, T. Honma, T. Uruga, and A. Trampert
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara
  • Year and Date: 2012-09-27
• [Presentation] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Its Comparative Study with Photoluminescence Spectroscopy (2010)
  • Author(s): H. Nakamoto, F. Ishikawa, M. Kondow, Y. Oshima, A. Yabuchi, M. Mizuno, H. Araki, Y. Shirai
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-24
• [Presentation] Direct band engineering with sub-monolayer nitride into III-V quantum system (2010)
  • Author(s): F. Ishikawa, M. Morifuji, S. Furuse, K. Nagahara, M. Uchiyama, K. Higashi, and M. Kondow
  • Organizer: The 16th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Berlin
  • Year and Date: 2010-08-24
• [Presentation] Temperature dependence of photoluminescence peak energy in Ga(In)Nas (2010)
  • Author(s): S. Emura, H. Nakamoto, F. Ishikawa, M. Kondow, and H. Asahi
  • Organizer: The 30th International Conference on the Physics of Semiconductors
  • Place of Presentation: Seoul
  • Year and Date: 2010-07-27
• [Presentation] Determination of the band gap and its exciton binding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and a photo-reflectance spectroscopy (2010)
  • Author(s): A. Fukuyama, T. Ikari, M. Yano, K. Sakai, H. Yokoyama, and M. Kondow
  • Organizer: European Materials Research Society 2010 Spring Meeting
  • Place of Presentation: Strasbourg
  • Year and Date: 2010-06-10
• [Remarks] ホームページ
  • URL: http://www.e3.eei.eng.osaka-u.ac.jp/