2010 Fiscal Year Final Research Report
Development of the growth technique of truly bulk GaN single crystals
| Project/Area Number |
20360140
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORI Yusuke Osaka University, 工学研究科, 教授 (90252618)
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| Co-Investigator(Kenkyū-buntansha) |
KITAOKA Yasuo 大阪大学, 工学研究科, 教授 (70444560)
IMADE Mamoru 大阪大学, 工学研究科, 特任助教 (40457007)
KAWAMURA Fumio 大阪大学, 工学研究科, 研究員 (80448092)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 窒化ガリウム / Naフラックス法 / 液相エピタキシャル / 溶液攪拌 |
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| Research Abstract |
The seeded growth of bulk GaN single crystals on a small GaN seed was performed by Na flux method. The addition of carbon into Ga/Na solution prevented the formation of polycrystals on a crucible wall, resulted in the promotion of GaN growth on a seed. Sr, Ba and Ca additives changed the growth habit from pyramidal shape to prism shape. In addition, the growth rate on a seed dramatically increased by stirring the solution. Using these techniques, the long-term growth of 600h enabled to obtain the prism-shaped bulk GaN single crystal (9.0mm width and 11mm height, with full widths at half maximum of GaN (10-11) X-ray rocking curve of 20~50 arcsec).
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[Presentation] Recent progress in the growth of GaN single crystals using the Na flux method2008
Author(s)
F. Kawamura, S. Katsuike, Y. Hirabayashi, Y. Kitano, N. Miyoshi, M.Imade, M.Yoshimura, Y.Kitaoka, T.sasaki, Y.Mori
Organizer
Asia Core Workshop on Wide Bandgap Semiconductors(ACW)
Place of Presentation
Kwangju, Korea.
Year and Date
20081022-20081023
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