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2010 Fiscal Year Final Research Report

New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions

Research Project

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Project/Area Number 20360163
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionToyota Technological Institute

Principal Investigator

SAKAKI Hiroyuki  Toyota Technological Institute, 工学部, 教授 (90013226)

Co-Investigator(Kenkyū-buntansha) OHMORI Masato  豊田工業大学, 工学部, 助教 (70454444)
VITUSHINSKIY Pavel  豊田工業大学, 工学部, PD研究員 (30545330)
AKIYAMA Yoshihiro  豊田工業大学, 工学部, PD研究員 (60469773)
Co-Investigator(Renkei-kenkyūsha) NODA Takeshi  独立行政法人物質・材料研究機構, 量子ドットセンター, 主幹研究員 (90251462)
KAWAZU Takuya  独立行政法人物質・材料研究機構, 量子ドットセンター, 主任研究員 (00444076)
Project Period (FY) 2008 – 2010
Keywords量子デバイス / スピンデバイス / 量子ナノ構造
Research Abstract

New ways are developed to form nanostructures in which one or more quantum dots (QDs) are placed near a channel consisting of a single or plural quantum wires. When the structures are illuminated to generate carriers, electrons or holes are captured by QDs and affect the channel conductance, bringing forth the photoconductive functions. To form these structures, QDs were made by employing self assembly techniques, while wire structures are made by such methods as (1) the formation of multi-atomic steps on a vicinal GaAs substrate, (2) the stacking of multiple QDs, and (3) lithography.

  • Research Products

    (19 results)

All 2011 2010 2009 2008

All Journal Article (10 results) (of which Peer Reviewed: 10 results) Presentation (8 results) Book (1 results)

  • [Journal Article] Diffusion process of excitons in the wetting layer and their trapping by quantum dots in sparsely spaced InAs quantum dot systems2011

    • Author(s)
      M.Ohmori, P.Vitushinskiy, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.98

      Pages: 133109

    • Peer Reviewed
  • [Journal Article] Anisotropic diffusion of In atoms from an In droplet and formation of elliptically shaped InAs quantum dot clusters on (100) GaAs2011

    • Author(s)
      T.Noda, T.Mano, H.Sakaki
    • Journal Title

      Crystal Growth & Design Vol.11, 3

      Pages: 726-728

    • Peer Reviewed
  • [Journal Article] Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots2011

    • Author(s)
      Li GD, Jiang C, Zhu QS, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.98, 3

      Pages: 032103

    • Peer Reviewed
  • [Journal Article] Temperature dependence of magneto-capacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots2010

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Jpn.J.Appl.Phys. Vol.49, 9

      Pages: 090205

    • Peer Reviewed
  • [Journal Article] Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas2010

    • Author(s)
      Li GD, Yin H, Zhu QS, H.Sakaki, Jiang C.
    • Journal Title

      J.Appl.Phys. Vol.108, 4

      Pages: 043702

    • Peer Reviewed
  • [Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2010

    • Author(s)
      Y.Akiyama, T.Kawazu, T.Noda, H.Sakaki
    • Journal Title

      AIP Conf.Proc Vol.1199

      Pages: 265-266

    • Peer Reviewed
  • [Journal Article] Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density self-assembled InAlAs antidots2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.93

      Pages: 132116-1-3

    • Peer Reviewed
  • [Journal Article] Formation of ultra-low density (≦104 cm-2) self-organized InAs quantum dots on GaAs by a modified molecular beam epitaxy method2008

    • Author(s)
      M.Ohmori, T.Kawazu, K.Torii, T.Takahashi, H.Sakaki
    • Journal Title

      Appl.Phys.Exp. Vol.1

      Pages: 061202-1-3

    • Peer Reviewed
  • [Journal Article] Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Physica Status Solidi, (c) 5 No.9

      Pages: 2879-2881

    • Peer Reviewed
  • [Journal Article] Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Jpn.J.Appl.Phys. Vol.47, (5), pt.1

      Pages: 3763-3765

    • Peer Reviewed
  • [Presentation] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2010

    • Author(s)
      川津琢也, 榊裕之
    • Organizer
      2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-23
  • [Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010

    • Author(s)
      秋山芳広、川津琢也, 野田武司, 榊裕之
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] GaSb量子ドット入りGaAsFET素子の光照射効果:過渡応答2010

    • Author(s)
      伊賀健一郎, 山附太香史, 大森雅登, 秋山芳広, 榊裕之
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] Charge-sensitive tunneling diode towards single-photon detection2010

    • Author(s)
      P.Vitushinskiy, M.Ohmori, H.Sakaki
    • Organizer
      The International Conference on Nanophotonics 2010
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2010-06-01
  • [Presentation] Photoluminescence spectra and carrier capture processes in sparsely-spaced InAs quantum dot systems2010

    • Author(s)
      M.Ohmori, P.Vitushinskiy, H.Sakaki
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-05-31
  • [Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009

    • Author(s)
      秋山芳広, 川津琢也, 野田武司, 榊裕之
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
  • [Presentation] InAs量子ドット系における光励起キャリアの発光再結合と濡れ層での拡散過程2009

    • Author(s)
      高橋一真, 黒田知宏, 大森雅登, 榊裕之
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
  • [Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2008

    • Author(s)
      秋山芳広, 川津琢也, 野田武司, 榊裕之
    • Organizer
      29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
  • [Book] 奈米技的全貌與未来発展2009

    • Author(s)
      榊裕之
    • Total Pages
      213
    • Publisher
      青文出版社股〓有限公司

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Published: 2012-01-26   Modified: 2016-04-21  

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