2010 Fiscal Year Final Research Report
Synthesis and luminescence tailoring of multinary nitride phosphors under the low-voltage electron beam irradiation
| Project/Area Number |
20360320
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Structural/Functional materials
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
XIE Rong-Jun National Institute for Materials Science, ナノセラミックスセンター, 主幹研究員 (00370297)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAOTO Hirosaki 独立行政法人物質・材料研究機構, ナノセラミックスセンター, グループリーダー (80343838)
TAKASHI Takeda 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 主任研究員 (60344488)
LI Yuanqiang 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 研究員 (00469777)
LI Huili 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 研究員 (90469776)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Keywords | 蛍光体 / 窒化物 / FED / 電子線励起 / ガス圧焼結 |
|---|
| Research Abstract |
The role of Si playing in the luminescence and the solubility of Eu^<2+> in AlN was investigated by measuring the luminescence spectra and XRD patterns. It is understood that the doping of Si enhances the solubility of Eu2+ in AlN, and plays a key role in reducing the amount of impurity phases and in improving the cathodoluminescence of AlN:Eu,Si. It is clarified that Eu forms a single layer structure with the Si condensation between the AlN wurtzite blocks, based on the analytic results of EXAFS and HAADF-STEM techniques. In addition, the cathodoluminescence properties of nitride phosphors for white LEDs, such as La-Si-O-N:Ce^<3+>, β-sialon:Eu^<2+>, AlN-SiC:Eu^<2+>, γ-alon:Mn^<2+>, were investigated, through the bandgap engineering and surface modification. Among these, green β-sialon:Eu^<2+> and blue AlN-SiC:Eu^<2+> phosphors show interesting cathodoluminescence, enabling them to be used for field-emission devices.
|
