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2010 Fiscal Year Final Research Report

Creation and annihilation of conductive nanowires in insulators

Research Project

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Project/Area Number 20510108
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionShibaura Institute of Technology

Principal Investigator

KYUNO Kentaro  Shibaura Institute of Technology, 工学部, 教授 (40251467)

Project Period (FY) 2008 – 2010
Keywordsメモリ / 酸化物 / ナノ細線
Research Abstract

The forming process in planar-type Cu_2O resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu_2O surface, and the filament is created~15 m below the surface ; the second process involves melting of the region between the electrodes with the creation of a new filament~1μm below the surface.

  • Research Products

    (9 results)

All 2011 2010 2009

All Journal Article (2 results) Presentation (7 results)

  • [Journal Article] Two-Step Forming Process in Planar-Type Cu_2O-Based Resistive Switching Devices2011

    • Author(s)
      K.Suzuki, N.Igarashi, K.Kyuno
    • Journal Title

      Applied Physics Express 4

      Pages: 051801

  • [Journal Article] Observation of the Creations and Annihilations of Local Current Paths in HfO_2 thin films on Pt by Ultrahigh Vacuum Conductive-Atomic Force Microscopy : Evidence of Oxygen Spill Over during the Forming Process2009

    • Author(s)
      N.Sasaki, K.Kita, A.Toriumi, K.Kyuno
    • Journal Title

      Japanese Journal of Applied Physics 48

      Pages: 060202

  • [Presentation] Direct observation of the forming process in crystalline Cu2O resistive switching devices2010

    • Author(s)
      N.Igarashi, K.Suzuki, K.Kyuno
    • Organizer
      20th Materials Research Society of Japan Academic Symposium
    • Place of Presentation
      Yokohama
    • Year and Date
      2010-12-21
  • [Presentation] Cu_2Oを用いた平面型ReRAM素子におけるフォーミング過程の直接観察2010

    • Author(s)
      弓野健太郎、鈴木和典
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-17
  • [Presentation] 平面型ReRAM素子におけるフォーミング現象初期過程の直接観察2010

    • Author(s)
      鈴木和典、弓野健太郎
    • Organizer
      応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
  • [Presentation] Direct Observation of Conductive Path after Forming Process in Planar ReRAM2009

    • Author(s)
      K.Suzuki, K.Kyuno
    • Organizer
      Academic Symposium of MRS-Japan
    • Place of Presentation
      Yokohama
    • Year and Date
      2009-12-08
  • [Presentation] Improvement of the Device Yield of TiO2 based ReRAM by Oxidation of Electrodes2009

    • Author(s)
      E.Shinozaki, K.Kyuno
    • Organizer
      Academic Symposium of MRS-Japan
    • Place of Presentation
      Yokohama
    • Year and Date
      2009-12-08
  • [Presentation] 電極の酸化によるTiO2薄膜の抵抗変化スイッチング現象の安定化2009

    • Author(s)
      星野智也、弓野健太郎
    • Organizer
      日本金属学会
    • Place of Presentation
      京都大学
    • Year and Date
      2009-09-16
  • [Presentation] 平面型ReRAMにおけるフォーミング現象の直接観察2009

    • Author(s)
      鈴木和典、弓野健太郎
    • Organizer
      応用物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09

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Published: 2012-01-26   Modified: 2016-04-21  

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