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2010 Fiscal Year Final Research Report

New Schottky-barrier theory responding to interface structures

Research Project

  • PDF
Project/Area Number 20540310
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionChiba University

Principal Investigator

NAKAYAMA Takashi  Chiba University, 大学院・理学研究科, 教授 (70189075)

Project Period (FY) 2008 – 2010
Keywordsショットキーバリア / 界面 / 第一原理計算 / 電荷中性準位 / シリサイド / 偏析
Research Abstract

Recent experi ments found unusual behaviors of Schottky barrier, i.e., the energy-level difference between metal and nonmetal materials, which cannot be explained by previous theories. By using quantum mechanical calculations, this project has shown that such behaviors originate from the selective atomic bonding, the formation of compounds, and the segregation of impurities at interfaces, and has constructed a new generalized theory of Schottky barrier.

  • Research Products

    (46 results)

All 2011 2010 2009 2008 Other

All Journal Article (13 results) (of which Peer Reviewed: 13 results) Presentation (30 results) Book (2 results) Remarks (1 results)

  • [Journal Article] Metal-Atom Diffusion in Organic Solids : First-Principles Study of Graphene and Polyacetylene Syatems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Journal Title

      Appl.Phys.Express 3

      Pages: 091601-1-3

    • Peer Reviewed
  • [Journal Article] Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approx-imation2010

    • Author(s)
      Y.Ono, K.Kusakabe, T.Nakayama
    • Journal Title

      J.Phys.Soc.Jpn. 79

      Pages: 074701-1-5

    • Peer Reviewed
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama, Y.Maruta, K.Kobinara
    • Journal Title

      ECS Trans Vol.33, No.10

      Pages: 1-7

    • Peer Reviewed
  • [Journal Article] Firstprinciples study on Nitrogen-induced band-gap reduction in III-V semi conductors2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Physics Procedia 3

      Pages: 1363-1366

    • Peer Reviewed
  • [Journal Article] Stability and Schottky barrier of silicides: First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Journal Title

      Micro electronics Eng. 86

      Pages: 1718-1721

    • Peer Reviewed
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y.Tomita, T.Nakayama, H.Ishii
    • Journal Title

      eJ.Surf.Sci.Nanotech. 7

      Pages: 606-616

    • Peer Reviewed
  • [Journal Article] First-principles Study of Schottky-Barrier Behavior at Metal/InN Interfaces2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 48

      Pages: 081001-1-5

    • Peer Reviewed
  • [Journal Article] Electron carrier generation at edge dislocations in InN films; First-principles study2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2767-2771

    • Peer Reviewed
  • [Journal Article] Firstprinciples study on band-gap reduction in GaN/GaSb superlattices2009

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Micro electronics J 40

      Pages: 824-826

    • Peer Reviewed
  • [Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008

    • Author(s)
      H.Ishii, Y.Tomita, Y.Shigeno, T.Nakayama
    • Journal Title

      eJ.Surf.Sci.Nanotech. 6

      Pages: 213-221

    • Peer Reviewed
  • [Journal Article] Energy-level alignment, ionization, and stability of bio-amino acids at amino-acid/Si junctions2008

    • Author(s)
      M.Oda, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 3712-3718

    • Peer Reviewed
  • [Journal Article] Atomic and electronic structures of stair-rod dislocations in Si and GaAs2008

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 4417-4421

    • Peer Reviewed
  • [Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces ; Silicide Formation vs. Random Mixing2008

    • Author(s)
      T.Nakayama, S.Shinji, S.Sotome
    • Journal Title

      ECS Trans Vol.16, No.10(招待講演論文)

      Pages: 787-795

    • Peer Reviewed
  • [Presentation] 金属/絶縁体界面の物理-電子準位はどのように整列するのか-2010

    • Author(s)
      中山隆史
    • Organizer
      触媒学会燃料電池関連触媒研究会
    • Place of Presentation
      伊東(招待講演)
    • Year and Date
      20100909-20100910
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010

    • Author(s)
      中山隆史, 他
    • Organizer
      2010 IEEE International Electron Devices Meeting
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2010-12-07
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai China(招待講演)
    • Year and Date
      2010-11-03
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      長崎大(シンポジウム招待講演)
    • Year and Date
      2010-09-16
  • [Presentation] Doping properties of metal silicides : firstprinciples study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
  • [Presentation] Metal-atom diffusion in organic semiconductors : graphene and oligoacene systems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
  • [Presentation] Photo-absorption spectra of nitrogen-doped InP and GaP : Comparison of direct and indirect band-gap systems2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-22
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides: First-principles Study2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Symp.Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-05
  • [Presentation] First-principles study of metal-cluster adsorption on graphene/graphite sheets2010

    • Author(s)
      T.Park, T.Nakayama
    • Organizer
      5th Int.Workshop on Electronic Structure and Processes at Molecular-Based Interfaces
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2010-01-26
  • [Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces2009

    • Author(s)
      中山隆史
    • Organizer
      2nd Int.Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Anan, Japan(招待講演)
    • Year and Date
      20090809-20090814
  • [Presentation] Universal Behavior of Metal-atom Diffusions in Organic Pentacene and Graphene Systems ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-02
  • [Presentation] Physics of Polymorphic Silicide Interfaces ; Firstprinciples Study of Stability, Doping, and Schottky Barrier2009

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-01
  • [Presentation] Metal atom diffusion in organic solids ; first-principles study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      G-COE Workshop on Organic Elctronics : Electronic States, Charge Transport and Devices
    • Place of Presentation
      Chiba, Japan(招待講演)
    • Year and Date
      2009-11-05
  • [Presentation] Transient current behavior at nano-contact nano-scale systems2009

    • Author(s)
      中山隆史
    • Organizer
      Photonics Integration-Core Electronics Workshop
    • Place of Presentation
      Cambridge, UK(招待講演)
    • Year and Date
      2009-07-03
  • [Presentation] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Organizer
      16th Biannual Conf. Insulating Films on Semi conductors
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-06-30
  • [Presentation] Adsorption and Diffusion of Metal Atoms in/on Graphene Sheets ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      15th Int.Symp.Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-13
  • [Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009

    • Author(s)
      T.Nakayama, M.Oda
    • Organizer
      15th Int.Symp.Intercalation Compounds, Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-12
  • [Presentation] 未来デバイス界面の物理-ショットキーバリアと量子散逸を例に2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      筑波大(シンポジウム招待講演)
    • Year and Date
      2009-04-01
  • [Presentation] 可視光で見る埋もれた界面の電子:反射率差分光(RDS)の物理2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      .筑波大(シンポジウム招待講演)
    • Year and Date
      2009-03-31
  • [Presentation] Metal-atom diffusion in organic solids : graphene and acetylene prototypes2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      5th Int.Conf.Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
  • [Presentation] Transient current behavior in nano-linked molecularbridge systems ; what causes appliedpulse deformation?2009

    • Author(s)
      中山隆史
    • Organizer
      5th Int. Conf.Molecular Elect.Bioelectronics
    • Place of Presentation
      Miyazaki, Japan(招待講演)
    • Year and Date
      2009-03-16
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces2008

    • Author(s)
      T.Nakayama, R.Ayuda, H.Nii, K.Shiraishi
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA(招待講演)
    • Year and Date
      20080324-20080328
  • [Presentation] Current-induced quantum friction in nano-linked molecule vibration2008

    • Author(s)
      中山隆史
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
  • [Presentation] Electronic breathing of transient current through molecule-bridge systems2008

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
  • [Presentation] Theory of current-induced friction of nano-linked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-07
  • [Presentation] Firstprinciples study of defect-induced carrier generation in InN films ; dislocation vs. vacancies and electrode interfaces2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-05
  • [Presentation] Electron carrier generation by edge dislocations in InN films ; first-principles study2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-08-01
  • [Presentation] Currentinduced quantum friction of nanolinked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
  • [Presentation] Stability and Schottky barrier of polymorphic NixSiy silicides on Si substrate ; first-principles study2008

    • Author(s)
      T.Nakayama, S.Shinji
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
  • [Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya Section 1.12)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama, Y.Kangawa, K.Shiraishi
    • Total Pages
      113-174
    • Publisher
      Elsevier B.V., Amsterdam
  • [Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu, Vol.III)(Role of computational science in Si nanotechnologies and devices)2010

    • Author(s)
      K.Shiraishi, T.Nakayama
    • Total Pages
      1-46
    • Publisher
      Oxford University Press
  • [Remarks] ホームページ等

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

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Published: 2012-01-26   Modified: 2016-04-21  

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