2010 Fiscal Year Final Research Report
Study on carrier transport processes in InN by the developing of sensing method of mobility depth profile by infrared spectroscopy
Project/Area Number |
20560005
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Chiba University |
Principal Investigator |
ISHITANI Yoshihiro Chiba University, 大学院・工学研究科, 教授 (60291481)
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Project Period (FY) |
2008 – 2010
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Keywords | 結晶評価 / 窒化インジウム / 赤外光物性 / 電子素子 |
Research Abstract |
InN has a nitride material with the peculiarly small energy bandgap of 0.63 eV, and is expected to be applied to high frequency electronic devices. We have overcome the difficulty in physical analysis stemming from the electron accumulation layers around the surface and interface with the substrates. It is found that the mobility of electrons of inside regions is nearly 5000cm^2/Vs. The edge-type dislocations are one of the main scattering centers of electrons and holes, in addition for holes, Mg or related complexes are also competitive scattering centers. For InN/InGaN heterostructure, the electrons localized around the interface has the density of the order of 10^<13> cm^<-3>, and has mobility as small as that of InGaN because of the electron wavefunction penetration to the InGaN layer, which indicates the necessity of the improvement of the crystal quality of InGaN alloys.
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Research Products
(44 results)
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[Journal Article] Conduction band filling in In-rich InGaN and InN under hydrostatic pressure2008
Author(s)
G.Franssen, A.Kaminska, T.Suski, I.G.Franssen, A.Kaminska, T.Suski, I.Gorczyca, A.Svane, H.Lu, W.J.Schaff, E.Dimakis, A.Georgakilas, S.B.Che, Y.Ishitani, A.Yoshikawa
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Journal Title
Physica Status Solidi (c) 5
Pages: 1488-1490
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[Journal Article] Bowing of the band gap pressure coefficient in InxGa1-xN alloys ournal of Applied Physics 103 2008 033514-(1-6)
Author(s)
G.Franssen, I.Gorczyca, T.Suski, A.Kaminska, J.Pereiro, E.Munoz, E.Illiopoulos, A.Georgakilas, S.B.Che, Y.Ishitani, A.Yoshikawa, N.E.Christensen
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