2010 Fiscal Year Final Research Report
Control of band structure of multiple band gap semiconductor and its application to high-efficiency solar cell
| Project/Area Number |
20560008
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
NABETANI Yoichi University of Yamanashi, 大学院・医学工学総合研究部, 准教授 (30283196)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUMOTO Takashi 山梨大学, 大学院・医学工学総合研究部, 教授 (00020503)
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| Co-Investigator(Renkei-kenkyūsha) |
MURANAKA Tsutomu 山梨大学, 大学院・医学工学総合研究部, 准教授 (20374788)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 太陽電池 / 半導体 |
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| Research Abstract |
Sun shine is one of the most important renewable energies. We have grown semiconductors which has an intermediate band gap to increase the efficiency of solar cell. We have shown that the intermediate band gap semiconductors can absorb photons having less energy than band gap and can generate current. The practical solar cells were made and investigated their properties.
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