2010 Fiscal Year Final Research Report
Development of Ultraviolet APD Device by Widegap Semiconductors
| Project/Area Number |
20560009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tottori University |
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Principal Investigator |
ANDO Koshi Tottori University, 工学研究科, 教授 (60263480)
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| Co-Investigator(Kenkyū-buntansha) |
ABE Tomoki 鳥取大学, 工学研究科, 准教授 (20294340)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 紫外光波帯APD素子 / ワイドギャップ化合物半導体APD素子 / 有機-無機複合型APD素子 / 化合物半導体MBE成長 |
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| Research Abstract |
High efficiency UV-photodiodes (PIN and APD) have been developed using widegap compound semiconductors (ZnSSe/GaAs) by MBE. PIN structure device shows external quantum efficiencies of 60% in UV region (350nm). On the other hand、 new hybrid-structure ZnSSe-PEDOT exhibits clear APD operation under extremely low voltage of 28-35V with high signal gain (G～100).
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Research Products
(12 results)
