2010 Fiscal Year Final Research Report
Formation of strained quasi-single crystal SiGe on glass for transistor application
| Project/Area Number |
20560011
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
SADOH Taizoh Kyushu University, 大学院・システム情報科学研究院, 准教授 (20274491)
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| Co-Investigator(Kenkyū-buntansha) |
KENJO Atsushi 九州大学, 大学院・システム情報科学研究院, テクニカルスタッフ (20037899)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 半導体 / SiGe / ディスプレイ |
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| Research Abstract |
Formation techniques of strained quasi-single crystal SiGe on glass were investigated for transistor application. We have realized orientation control of SiGe on insulating substrates. Furthermore, the device fabrication process of silicide S/D transistors was developed.
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