2010 Fiscal Year Final Research Report
Fabrication of p-type ZnO using hydroge co-doping
| Project/Area Number |
20560014
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Ishinomaki Senshu University |
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Principal Investigator |
YASUDA Takashi Ishinomaki Senshu University, 理工学部, 教授 (90182336)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 酸化亜鉛 / ゾル / ゲル法 / 水素 / 電気伝導 / ドナー / アクセプター |
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| Research Abstract |
Behavior of hydrogen in sol-gel ZnO thin layers has been investigated. Resistivity of ZnO decreases two orders of magnitude by thermal annealing in hydrogen gas atmosphere. This result indicates that diffused hydrogen acts as donor in ZnO. Subsequent annealing in air puts the resistivity back to the previous value, indicating successful control of hydrogen input and output into ZnO by thermal annealing.
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