Electron Holography Observation of 2DEG at AlGaN/GaN on the working condition.

2010 Fiscal Year Final Research Report

• Project/Area Number: 20560028
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: TAKEGUCHI Masaki National Institute for Materials Science, ナノ計測センター, 主幹研究員 (30354327)
• Project Period (FY): 2008 – 2010
• Keywords: 電子線ホログラフィー / 窒化物半導体 / その場観察

Research Abstract

By making a Pt probe contact with AlGaN/GaN grown on sapphire C plane in a 3 feedthoughs bult-in sample holder, potential change of AlGaN/GaN due to applied bias voltage were observed by electron holography. We could produce the practical working condition of AlGaN/GaN devices in TEM, demonstrating that potential differences caused at the working conditions could be investigated by electron holography.

Research Products

• [Journal Article] Phase Separation Resulted from Mg-doping in p-InGaN film grown on GaN/sapphire template (2010)
  • Author(s): L.Sang, M.Takeguchi, W.Lee, T.Sekiguchi, L.Lozach, M.Sumiya
  • Journal Title: Applied Physics Express 3巻 Pages: 111004(1)-111004(4)
  • Peer Reviewed
• [Journal Article] Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates (2010)
  • Author(s): M.Sumiya, Y.Kamo, N.Ohashi, M.Takeguchi, Y.-U.Heo, H.Yoshikawa, S.Ueda, K.Kobayashi, T.Nihashi, M.Hagino, T.Nakano, S.Fuke
  • Journal Title: Applied Surface Science 256巻 Pages: 4442-4446
  • Peer Reviewed
• [Journal Article] Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy (2009)
  • Author(s): Y.Yao, T.Sekiguchi, T.Ohgaki, Y.Adachi, N.Ohashi, H.Okuno, M.Takeguchi
  • Journal Title: Applied Physics Letter 95巻 Pages: 041913(1)-041913(3)
  • Peer Reviewed
• [Journal Article] 先端透過型電子顕微鏡法を用いたIII属窒化物半導体ヘテロ界面評価 (2008)
  • Author(s): 竹口雅樹
  • Journal Title: 表面技術 59巻 Pages: 783-788
• [Journal Article] Sample Preparation of GaN- Based Materials on a Sapphire Substrate for STEM Analysis (2008)
  • Author(s): H.Okuno, M.Takeguchi, K.Mitsuishi, X.Guo, Y.Irokawa, Y.Sakuma, K.Furuya
  • Journal Title: Journal of Electron Microscopy 57巻 Pages: 1-5
  • Peer Reviewed
• [Journal Article] Local characterizations of quaternary AlInGaN/GaN hetero- structures using TEM and HAADF-STEM (2008)
  • Author(s): H.Okuno, M.Takeguchi, K.Mitsuishi, X.Guo, Y.Irokawa, Y.Sakuma, K.Furuya
  • Journal Title: Surface Interface Analysis 40巻 Pages: 1660-1663
  • Peer Reviewed
• [Journal Article] HAADF-STEM and electron holography observations of AlInGaN/GaN hetero-structures (2008)
  • Author(s): M.Takeguchi, H.Okuno, K.Mitsuishi, Y.Irokawa, Y.Sakuma, K.Furuya
  • Journal Title: AMTC Letters 1巻 Pages: 66-67
  • Peer Reviewed
• [Presentation] Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy (2009)
  • Author(s): Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi
  • Organizer: 8th Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Nagano, Japan
  • Year and Date: 20090825-20090828
• [Presentation] Electron Holography Observation of AlInGaN/GaN Hetero interfaces (2008)
  • Author(s): M.Takeguchi, H.Okuno, Y.Irokawa, Y.Sakuma, K.Furuya
  • Organizer: The 9th Asia-Pacific Microscopy Conference (APMC9)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 20081102-20081107
• [Presentation] Characterization of AlInGaN/GaN heterointerface by HAADF-STEM and electron holography (2008)
  • Author(s): M.Takeguchi, H.Okuno, Y.Irokawa, Y.Sakuma, K.Furuya
  • Organizer: Microscopy & Microanalysis 2008 Meeting
  • Place of Presentation: Albuquerque, NM, USA
  • Year and Date: 20080803-20080807