2010 Fiscal Year Final Research Report
Application of semiconductor quantum dots with organic thin film on silicon substrates to high conversion-efficiency solar cells
| Project/Area Number |
20560291
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
YAMAGUCHI Koichi The University of Electro-Communications, 大学院・情報理工学研究科, 教授 (40191225)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 量子ドット / 太陽電池 / 分子線エピタキシー / InAs / GaAs |
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| Research Abstract |
InAs/GaAs quantum dots (QDs) were fabricated on Ge(001) substrates by molecular beam epitaxy. High-density InAs QDs with 7×1010 cm-2 were successfully obtained by using Sb-containing GaAs buffer layers. Optical absorption of long wavelength light in the InAs QD layers provided additional photocurrent. Organic thin-films on the InAs QD layers played a role for surface passivation. These results are expected for development of solar cells with high conversion efficiency in future.
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