2010 Fiscal Year Final Research Report
Development of dopant concentration measurement technique for next-generation devices
| Project/Area Number |
20560296
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
TANAKA Shigeyasu Nagoya University, エコトピア科学研究所, 准教授 (70217032)
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| Research Collaborator |
DEGUCHI Masashi 名古屋大学, 大学院・工学研究科
KUSHIDA Takuya 名古屋大学, 大学院・工学研究科
NIWA Tatsushi 名古屋大学, 大学院・工学研究科
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| Project Period (FY) |
2008 – 2010
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| Keywords | 作成・評価技術 / 電子顕微鏡 / 半導体 / 電子線誘起電流 |
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| Research Abstract |
For cross-sectional observations using p-n junction samples, the width of the depletion region decreased as the thickness decreases. This is due to the reduced diffusion length. But for regions thinner than about 0.1μm, the EBIC signal intensity starts to decrease quickly as the sample thickness decreases, and disappears. This is probably due to a presence of a surface depletion region. Cross-sectional samples on which Schottky contact was placed were also analyzed. It was shown that dopant distribution can be reproduced with accuracy better than 10nm from the EBIC current.
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