2010 Fiscal Year Final Research Report
Research of dislocation-free silicon-carbide growth
| Project/Area Number |
20560301
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
HATAYAMA Tomoaki Nara Institute of Science and Technology, 物質創成科学研究科, 助教 (90304162)
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| Project Period (FY) |
2008 – 2010
|
| Keywords | 炭化ケイ素 / エッチング / 転位 |
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| Research Abstract |
A surface modification and lateral growth were applied to reduce the dislocation in the SiC grown layers. When a SiC layer was grown on the surface modified substrate, the basal plane dislocations were converted to the threading dislocations. The dislocation density in SiC could be reduced at the lateral growth area.
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Research Products
(19 results)
