Study on nitride-based semiconductor photonic devices with nano-imprint technique

2010 Fiscal Year Final Research Report

• Project/Area Number: 20560302
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokushima
• Principal Investigator: NAOI Yoshiki The University of Tokushima, 大学院・ソシオテクノサイエンス研究部, 准教授 (90253228)
• Co-Investigator(Kenkyū-buntansha): SAKAI Shiro 徳島大学, 大学院・ソシオテクノサイエンス研究部, 教授 (20135411)
• Project Period (FY): 2008 – 2010
• Keywords: 薄膜・量子構造

Research Abstract

We have studied on the development and the improvement of device performance of nitride-based semiconductor photonic devices by using nano-imprint lithography technique. We have experimentally confirmed the diffraction effects for the sample with surface periodic structure on GaN surface fabricated by nano-imprint lithography technique. We fabricated the photodetector with this structure, and investigated the fundamental characteristics for the device. We also studied for the LED devices with the periodic structure on the surface and the interface between the GaN and the substrate, and investigated the effects on output light power and the directivility.

Research Products

• [Journal Article] Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate (2010)
  • Author(s): Yuji Nariyuki, Masakazu Matsumoto, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Journal Title: physica status solidi (c) Vol.7, No.7-8 Pages: 2121-2123
  • Peer Reviewed
• [Journal Article] GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography technique (2010)
  • Author(s): Yoshiki Naoi, Masakazu Matsumot, Tianya Tan, Mitsuaki Tohno, Shiro Sakai Jing Zhang, Atsuyuki Fukano, Satoru Tanaka
  • Journal Title: physica status solidi (c) Vol.7, No.7-8 Pages: 2154-2156
  • Peer Reviewed
• [Journal Article] GaN surface nanostructure photodetector based on back side incidence (2010)
  • Author(s): Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Journal Title: physica status solidi (c) Vol.7, No.7-8 Pages: 1804-1806
  • Peer Reviewed
• [Journal Article] Fabrication and Photovoltaic Measurements of Surface Nanostructure of A1GaInN-Based Photodetector (2009)
  • Author(s): Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Journal Title: Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes) Vol.48 Pages: 111001-1-111001-5
  • Peer Reviewed
• [Presentation] GaN系UV-LEDの偏光特性 (2010)
  • Author(s): 松本将和, 福田弘之, 直井美貴, 酒井士郎
  • Organizer: 平成22年度電気関係学会四国支部連合大会,11-14
  • Place of Presentation: 愛媛大学
  • Year and Date: 2010-09-25
• [Presentation] ナノ微粒子技術を用いたGaN表面周期構造の作製 (2010)
  • Author(s): 楠貴大, 沼島明菜, 直井美貴, 酒井士郎
  • Organizer: 平成22年度電気関係学会四国支部連合大会,11-17
  • Place of Presentation: 愛媛大学
  • Year and Date: 2010-09-25
• [Presentation] 金属マスクを施したサファイア表面周期構造へのGaN成長と評価 (2010)
  • Author(s): 和田祥吾, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 平成22年度電気関係学会四国支部連合大会,11-18
  • Place of Presentation: 愛媛大学
  • Year and Date: 2010-09-25
• [Presentation] 表面・界面に周期構造を有するGaN系LEDの配向特性評価 (2010)
  • Author(s): 松本将和, 福田弘之, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: LED総合フォーラム,69
  • Place of Presentation: あわぎんホール(徳島市)
  • Year and Date: 2010-04-17
• [Presentation] ナノ加工GaN基板上再成長層のTEM観察 (2010)
  • Author(s): 西野克志, 澤井佑介, 成行祐児, 野田丈嗣, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第57回応用物理学関係連合講演会,19a-TB2
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-19
• [Presentation] Front and Back Side Illumination of a Nano-Structured AlGaInN Photodetector (2010)
  • Author(s): Jing Zhang,, Takumi Taoka, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Organizer: 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials,PB064C
  • Place of Presentation: Nagoya
  • Year and Date: 2010-03-10
• [Presentation] GaN系表面ナノ構造光検出器 (2009)
  • Author(s): 張晶, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 電子情報通信学会電子デバイス研究会,Vol.109(No.288,83-87)
  • Place of Presentation: 徳島大学
  • Year and Date: 2009-11-12
• [Presentation] GaN-bled Light Emitting Diodes with Periodic Nano-structues on the Surface Fabricated by Nanoimprint Lithography Technique (2009)
  • Author(s): Yoshiki Naoi, Mitsuaki Tohno, Tianya Tan, Masakazu Matsmoto,, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Organizer: The 8th International Conference on Nitride Semiconductors,ThP106
  • Place of Presentation: Cheju, Oct.
  • Year and Date: 2009-10-22
• [Presentation] Evaluation and Re-growth of GaN on Nano-patterned GaN on a Sapphire Substrate (2009)
  • Author(s): Yuji Nariyuki, Masakazu Matsmoto, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Organizer: The 8th International Conference on Nitride Semiconductors,TP113
  • Place of Presentation: Cheju, Oct.
  • Year and Date: 2009-10-20
• [Presentation] GaN Surface Nanostructure Photodetector Based on Back Side Incidence (2009)
  • Author(s): 張晶, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: The 8th International Conference on Nitride Semiconductors,TP145
  • Place of Presentation: Cheju, Oct.
  • Year and Date: 2009-10-20
• [Presentation] 紫外線LEDの開発動向と今後の応用について (2009)
  • Author(s): 直井美貴
  • Organizer: 徳島ビジネスチャレンジメッセ2009LEDコンソーシアム基調講演
  • Place of Presentation: アスティ徳島
  • Year and Date: 2009-10-15
• [Presentation] 表面ナノ周期構造を有するlnGaN-LEDからの輻射光空間分布特性 (2009)
  • Author(s): 直井美貴, 松本将和, 諦天亜, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第70回応用物理学会学術講演会(11a-X-8)
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-11
• [Presentation] 裏面入射GaN系表面ナノ構造光検出器 (2009)
  • Author(s): 張晶, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第70回応用物理学会学術講演会,11a-E-9
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-11
• [Presentation] ナノ加工を施したGaN上への再成長及びその評価 (2009)
  • Author(s): 成行祐児, 松本将和, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第70回応用物理学会学術講演会,8D-F-2
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-08
• [Presentation] The surface nanostructure photo-voltaic property of GaN-based photodetector (2009)
  • Author(s): Jing Zang, S.Okuno, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka
  • Organizer: Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009),M03-7
  • Place of Presentation: Zhangjiajie (China)
  • Year and Date: 2009-05-25
• [Presentation] LEDの光出力改善技術 (2009)
  • Author(s): 直井美貴
  • Organizer: 技術情報協会LED照明の高輝度・長寿命化技術セミナー
  • Place of Presentation: 大田区産業プラザ
  • Year and Date: 2009-05-21
• [Presentation] サファイア上周期的ナノ構造を形成するためのナノインプリント技術開発とGaN系LED (2009)
  • Author(s): 直井美貴, 酒井士郎, 深野敦之, 田中覚, 納田卓, 木村真大, 川野俊輔, 村本宜彦
  • Organizer: 第56回応用物理学関係連合講演会,1p-ZJ-10
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] ナノインプリント技術により周期的ナノ構造を形成したGaN系光デバイスからのEL特性 (2009)
  • Author(s): 遠野充明, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第56回応用物理学関係連合講演会,1p-ZJ-11
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] GaNナノ加工pnダイオード光検出器 (2009)
  • Author(s): 張晶, 遠野充明, 奥野誠亮, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第56回応用物理学関係連合講演会,1a-ZJ-30
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] ナノ加工を用いたGaNのC-V特性 (2009)
  • Author(s): 成行祐児, 松本将和, 遠野充明, 直井美貴, 酒井士郎, 深野敦之, 田中覚
  • Organizer: 第56回応用物理学関係連合講演会,30p-ZJ-3
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] ナノインプリント技術により周期的微細構造を施したGaN系デバイスからの電流注入発光特性 (2008)
  • Author(s): 遠野充明, 張晶, 直井美貴, 酒井士郎, 和地順蔵
  • Organizer: 電子情報通信学会電子デバイス研究会,Vo1.ED2008-158
  • Place of Presentation: 名古屋工業大学
  • Year and Date: 2008-11-20
• [Presentation] ナノインプリント技術によるサファイア基板上へのナノ構造の形成 (2008)
  • Author(s): 遠野充明, 直井美貴, 酒井士郎, 和地順蔵
  • Organizer: 平成20年度電気関係学会四国支部連合大会,11-3
  • Place of Presentation: 徳島大学
  • Year and Date: 2008-09-27