2010 Fiscal Year Final Research Report
MOS Structure with Si-Implanted Oxide for Light Emitting Device Embedded in LSI
| Project/Area Number |
20560307
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyama Prefectural University |
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Principal Investigator |
MATSUDA Toshihiro Toyama Prefectural University, 工学部, 教授 (70326073)
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| Co-Investigator(Kenkyū-buntansha) |
IWATA Hideyuki 富山県立大学, 工学部, 准教授 (80223402)
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| Co-Investigator(Renkei-kenkyūsha) |
IWATSUBO Satoshi 富山県工業技センター, 中央研究, 幹研究員 (30416127)
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| Project Period (FY) |
2008 – 2010
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| Keywords | シリコン / MOS / 発光 |
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| Research Abstract |
As a silicon based light emitting device embedded in LSI (Large Scale Integration), an MOS(Metal Oxide Semiconductor)structure with silicon (Si) implanted gate oxide was studied. Si implantation caused hysteresis in current-voltage characteristics. Si implantation conditions such as energy and dose changed wavelength of light emission, and light emission model was proposed.
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