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2010 Fiscal Year Final Research Report

Study on wide-area inorganic electroluminescence devices driven by current injection

Research Project

  • PDF
Project/Area Number 20560326
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionTottori University

Principal Investigator

ICHINO Kunio  Tottori University, 大学院・工学研究科, 准教授 (90263483)

Co-Investigator(Kenkyū-buntansha) OHMI Koutoku  鳥取大学, 大学院・工学研究科, 准教授 (90243378)
Project Period (FY) 2008 – 2010
Keywords光デバイス・光回路 / 薄膜蛍光体 / エレクトロルミネッセンス
Research Abstract

In order to fabricate wide-area inorganic electroluminescence devices driven by current injection, effective carrier injection structures and improvement of the emission layer have been studied. For the former, although effective carrier injection structures are not actually realized, positive results have been obtained in doping single-crystal ZnS with N-acceptor and silver for the realization of homo-pn-junction. For the latter, optical properties of poly-crystal ZnS doped with copper have been improved by co-doping of aluminum.

  • Research Products

    (6 results)

All 2010 2009 2008

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (3 results)

  • [Journal Article] Optical Properties and X-Ray Absorption Fine Structure Analysis of ZnS : Cu, Cl Thin Film Phosphors2010

    • Author(s)
      Kunio Ichino, Haruki Kato, Yuichiro Sakai, Koutoku Ohmi,Tetsuo Honma, Jun-ichi Itoh, Asuka Sasakura
    • Journal Title

      Jpn.J.Appl.Phys. Vol.49

      Pages: 082602(6)

    • Peer Reviewed
  • [Journal Article] ZnS : N and ZnS : N, Ag grown by molecular beam epitaxy2010

    • Author(s)
      K.Ichino, A.Kotani, H.Tanaka, T.Kawai
    • Journal Title

      Physica Status Solidi (c) Vol.7

      Pages: 1504-1506

    • Peer Reviewed
  • [Journal Article] Molecular Beam Epitaxy of Phosphorus-doped ZnS2008

    • Author(s)
      Kunio Ichino, Hiroshi Yoshida, Takashi Kawai, Hiroyuki Matsumoto, Hiroshi Kobayashi
    • Journal Title

      J.Korean Phys.Soc. Vol.53

      Pages: 2939-2942

    • Peer Reviewed
  • [Presentation] 分子線エピタキシー法によるNおよびAg添加ZnSの作製と評価2010

    • Author(s)
      田中裕隆
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 湘南キャンパス
    • Year and Date
      2010-03-19
  • [Presentation] Ag添加ZnSのMBE成長と評価2009

    • Author(s)
      小谷明生
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 五福キャンパス
    • Year and Date
      2009-09-08
  • [Presentation] RFプラズマを用いたN添加ZnSのMBE成長と評価2009

    • Author(s)
      小谷明生
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学 筑波キャンパス
    • Year and Date
      2009-03-30

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Published: 2012-01-26   Modified: 2016-04-21  

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