2010 Fiscal Year Final Research Report
Study of the interface at MIS/GaN-FET
| Project/Area Number |
20560341
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
KIKAWA Junjiro Ritsumeikan University, 総合理工学研究機構, 教授 (70469196)
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| Co-Investigator(Kenkyū-buntansha) |
KANEKO Masamitsu 立命館大学, 総合理工学研究機構, 研究員 (70374709)
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| Project Period (FY) |
2008 – 2010
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| Keywords | GaN / MIS-FET / SiN / interface / trap / inversion layer / KFM / CV |
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| Research Abstract |
We studied an interface between SiN and GaN. We observed changes of fixed charges at the interface by stoichiometric variation of SiN and anneal treatments. The origin of this phenomenon might be point defects related to a difference of N atom surface density between SiN and GaN. We proposed the dipole model in order to explain it.
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