2010 Fiscal Year Final Research Report
Study on properties and functionalization of nonstoichiometric silicon-titanium nitride and oxide
| Project/Area Number |
20560623
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
KASUKABE Yoshitaka Tohoku University, 国際交流センター, 教授 (30194749)
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| Co-Investigator(Kenkyū-buntansha) |
SUTO Syouzo 東北大学, 理学研究科, 教授 (40171277)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 不定比化合物 / 窒化物 / 機能性材料 / イオン注入 / その場観察 / 透過電子顕微鏡 / 電子エネルギー損失分光 / 分子軌道計算 |
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| Research Abstract |
In order to clarify atomistic growth processes of TiN_y films due to the implantation of nitrogen ions (N_2^+) with 62keV into Ti films, changes of the concentration of H and/or N atoms in Ti films, and of the crystallographic and electronic structures of the films by heating and by nitriding have been investigated by in-situ transmission electron microscope (TEM) equipped with electron energy loss spectroscopy (EELS), with the aid of molecular orbital calculations. By taking into account the bonding interaction of Ti sublattices with ligand N atoms, it is clarified that the TiN_y is epitaxially formed by the N-implantation into the hcp-Ti, through the epitaxial transformation of the hcp-Ti to fcc-Ti sublattice, partially inheriting the atomic arrangement of the hcp-Ti, and accompanying the occupation of O-sites of the transformed fcc-Ti by N atoms.
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