2012 Fiscal Year Final Research Report
Development of highly efficient fabrication process of thin film devices on plastic materials using atmospheric-pressure plasma
| Project/Area Number |
20676003
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| Research Category |
Grant-in-Aid for Young Scientists (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2008 – 2012
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| Keywords | 大気圧プラズマ / 低温・高速成膜 / 電子・電気材料 / 薄膜トランジスタ |
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| Research Abstract |
We have developed a parallel-plate-type electrode system that can efficiently supply process gases into the narrow gap spacing between the electrode and a substrate and can avoid the contamination of the substrate surface by dusty particles. As a result, high-rate and low-temperature depositions of amorphous and microcrystalline Si, silicon oxide and silicon nitride films have been demonstrated using atmospheric- pressure very high-frequency plasma. Bottom-gate thin film transistors have successfully been fabricated on polyethylene naphthalate (PEN) sheet substrates of 0.125 mm thickness without causing any thermal damage of the substrate material.
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Research Products
(27 results)
