2012 Fiscal Year Final Research Report
Development of the smart deposition process of amorphous carbon films due to the control of plasma process
| Project/Area Number |
20684027
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Plasma science
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| Research Institution | Nagasaki University |
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Principal Investigator |
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| Project Period (FY) |
2008 – 2012
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| Keywords | 反応性プラズマ / プロセス診断 / プラズマ-固体表面相互作用 / プラズマプロセス制御 / アモルファス炭素膜 |
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| Research Abstract |
We investigated plasma enhanced chemical vapor deposition (PECVD) mechanism of an amorphous carbon film with infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). If methane plasma is used, sp^-hydrocarbon species, such as CH_2CH_3, are main precursors, contributed to film deposition. In the deposition process the relases of hydrogen from the precursors is needed to film growth. On the other hand, sp-hydrocarbon species, such as C_2H are the main precursors if acethylene plasma used. The species can be deposited through addition reaction without the relase of hydrogen. Then, the film deposition rate is higher with acethylene plasma than with methane plasma.
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