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2010 Fiscal Year Final Research Report

A study of quantized properties in transparent oxide microstructures

Research Project

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Project/Area Number 20685013
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Functional materials/Devices
Research InstitutionTohoku University

Principal Investigator

OHTOMO Akira  Tohoku University, 大学院・理工学研究科, 教授 (10344722)

Project Period (FY) 2008 – 2010
Keywords電子・磁気デバイス / 量子エレクトロニクス / 二次元電子ガス / 量子ホール効果 / 超伝導 / 電界効果トランジスタ
Research Abstract

Using environmentally benign transparent oxide semiconductors, we have created clean two-dimensional electron systems and succeeded in observing field-effect induced superconductivity and the fractional quantum Hall effect. These phenomena are originated from Coulomb interaction between quantized complex particles and thereby can potentially be applied for a basic element of completely new computer architectures. The materials used in this study exhibits exceptionally strong Coulomb interaction, compared with conventional semiconductors, presenting promising opportunities to find oxide semiconductors more exotic than ever in condensed matter physics.

  • Research Products

    (17 results)

All 2010 2009 2008 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results) Presentation (5 results) Book (1 results) Remarks (1 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] Observation of the fractional quantum Hall effect in an oxide2010

    • Author(s)
      A.Tsukazaki, A.Ohtomo(7番目)計8名
    • Journal Title

      Nat.Mater. 9

      Pages: 889-893

    • Peer Reviewed
  • [Journal Article] Dimensionality-driven insulator-metal transition in A-site excess non-stoichiometric perovskites2010

    • Author(s)
      Z.Wang, A.Ohtomo(5番目)計8名
    • Journal Title

      Nat.Commun. 1

      Pages: 106-1,106-7

    • Peer Reviewed
  • [Journal Article] Hydrogenation-induced surface polarity recognition and proton memory behavior at protic-ionic-liquid/oxide electric-double-layer interfaces2010

    • Author(s)
      H.Yuan, A.Ohtomo(4番目)計6名
    • Journal Title

      J.Am.Chem.Soc. 132

      Pages: 6672-6678

    • Peer Reviewed
  • [Journal Article] Electric field control of two-dimensional electrons in polymer-gated oxide semiconductor heterostructures2010

    • Author(s)
      M.Nakano, A.Ohtomo(3番目)計9名
    • Journal Title

      Adv.Mater. 22

      Pages: 876-879

    • Peer Reviewed
  • [Journal Article] Nitrogen doped Mg_xZn_1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates2010

    • Author(s)
      K.Nakahara, A.Ohtomo(15番目)計16名
    • Journal Title

      Appl.Phys.Lett. 97

      Pages: 013501-1,013501-3

    • Peer Reviewed
  • [Journal Article] Epitaxial Structure of (001) and (111)-Oriented Perovskite Ferrate Films Grown by Pulsed-Laser Deposition2010

    • Author(s)
      S.Chakraverty, A.Ohtomo(2番目)計5名
    • Journal Title

      Cryst.Growth Des. 33

      Pages: 157-160

    • Peer Reviewed
  • [Journal Article] Electric-field-induced superconductivity in an insulator2008

    • Author(s)
      K.Ueno, A.Ohtomo(4番目)計9名
    • Journal Title

      Nat.Mater. 7

      Pages: 855-858

    • Peer Reviewed
  • [Presentation] 酸化物界面の二次元伝導(招待)2010

    • Author(s)
      大友明
    • Organizer
      第4回稲盛フロンティア研究講演会-ナノエレクトロニクス・デバイスの新潮-
    • Place of Presentation
      福岡
    • Year and Date
      2010-06-11
  • [Presentation] ZnOヘテロ接合の表面・界面制御と量子伝導(招待)2009

    • Author(s)
      大友明, 塚崎敦, 川崎雅司
    • Organizer
      第29 回表面科学学術講演会
    • Place of Presentation
      東京
    • Year and Date
      20091027-20091029
  • [Presentation] High-mobility electron transport at polar oxide heterointerfaces (invited)2008

    • Author(s)
      A.Ohtomo
    • Organizer
      15th International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Year and Date
      20080803-20080808
  • [Presentation] 透明酸化物エレクトロニクスの実現に向けて(招待)2008

    • Author(s)
      大友明
    • Organizer
      社団法人未踏科学技術協会特別講演会材料イノベーションシリーズ第6回「伝導性透明酸化物」-世界をリードする透明導電膜の国内2大研究拠点から-
    • Place of Presentation
      東京
    • Year and Date
      2008-07-29
  • [Presentation] High-mobility electron gas at polar oxide heterointerfaces (invited)2008

    • Author(s)
      A.Ohtomo
    • Organizer
      Sir Martin Wood Prize Winner Lecture 2007 at University of Cambridge
    • Place of Presentation
      Cambridge, UK
    • Year and Date
      2008-06-20
  • [Book] Frontiers in Materials Research (edited by Y.Fujikawa, K.Nakajima and T.Sakurai)(Advances in Materials Research)2008

    • Author(s)
      A.Tsukazaki, A.Ohtomo, M.Kawasaki, Springer-Verlag
    • Total Pages
      77-86
  • [Remarks] ホームページ

    • URL

      http://www.apc.titech.ac.jp/~aohtomo/index.html6

  • [Patent(Industrial Property Rights)] ZnO系半導体素子2009

    • Inventor(s)
      中原健, 川崎雅司, 大友明, 塚崎敦
    • Industrial Property Rights Holder
      ローム(株),東北大学
    • Patent Publication Number
      特許,特開2009-130133
    • Filing Date
      2009-06-11
  • [Patent(Industrial Property Rights)] チタン酸ストロンチウム薄膜の製造方法2009

    • Inventor(s)
      川崎雅司, 大友明, 奥出正樹, 木太拓志
    • Industrial Property Rights Holder
      東北大学,トヨタ自動車
    • Patent Publication Number
      特許,特開2009-256768
    • Filing Date
      2009-11-05
  • [Patent(Industrial Property Rights)] ZnO系半導体素子2009

    • Inventor(s)
      中原健, 湯地洋行, 川崎雅司, 大友明, 塚崎敦, 福村知昭, 中野匡規
    • Industrial Property Rights Holder
      ローム(株),東北大学
    • Industrial Property Number
      特許,特許4362635
    • Acquisition Date
      2009-08-28

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Published: 2012-02-13   Modified: 2016-04-21  

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