2009 Fiscal Year Final Research Report
Development of Germanium Thin Film Transistor for Large Size LiquidCrystal Display with Low Electrical Power Consumption and High Definition
| Project/Area Number |
20686021
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
GOTO Tetsiua Tohoku University, 未来科学共同研究センター, 准教授 (00359556)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 薄膜トランジスタ / ゲルマニウム / シリコンゲルマニウム / 回転マグネットスパッタ |
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| Research Abstract |
To realize high performance thin film transistor of germanium silicon system, those thin films were deposited by magnetron sputtering and evaluated. It is found that crystallization of those films is observed for the substrate temperature larger than 250℃ by Ar plasma sputtering, while that is prevented and amorphous film is obtained by Ar/H_2 plasma reactive sputtering. The transistor operation can be obtained for the Ar/H2 reactive sputtering deposited germanium thin film, while that cannot be obtained for crystallized films.
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