2010 Fiscal Year Final Research Report
Investigation of carrier spin related phenomena in Si and its application to spin-functional devices
| Project/Area Number |
20686023
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAKANE Ryosho The University of Tokyo, 大学院・工学系研究科, 講師 (50422332)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 量子デバイス / スピンデバイス |
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| Research Abstract |
The final goal of this study is to realize spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs), which utilize carrier charge as well as carrier spin degrees of freedom. Since the operation principal of a spin MOSFET is spin dependent transport in a MOS inversion Si channel, ferromagnetic materials with a low Schottky barrier height are strongly needed. In this study, two different methods were used : (method 1) ion implantation, (method 2) auto-doping effect during the crystal growth of a ferromagnetic material. In method 1, ferromagnetic FeSi was fabricated through silicidation on a Si(001) substrate. To reduce the silicidation temperature, ion implantation of As atoms with a energy of 15eV were performed. As a result, we demonstrated that FeSi/Si junctions formed with a low temperature have a low Shottky barrier height for electrons. In method 2, MnAs grown on Si(001) was found to have a low Schottky barrier height for electrons, which is due to the auto-doping of As during the initial stage of molecular beam epitaxy. We fabricated spin MOSFETs with MnAs, and found that the spin MOSFETs exhibit hysteretic behavior below 50K, which probably originates from spin-dependent transport.
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