2010 Fiscal Year Final Research Report
High-density carrier doping by ionic liquids ; Application to Transition metal compounds
| Project/Area Number |
20740213
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Condensed matter physics II
|
|---|
| Research Institution | Central Research Institute of Electric Power Industry |
|---|
Principal Investigator |
ONO Shimpei Central Research Institute of Electric Power Industry, 材料科学研究所, 主任研究員 (30371298)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Keywords | イオン液体 / 有機電界効果トランジスタ / 電気二重層 / 半導体物性 / 強相関電子系 |
|---|
| Research Abstract |
Using an electronic device to control phase transitions is not only exciting from fundamental view points, but also offers potential applications for sensors, signal converters and memories. We have performed high-density carrier doping by ionic liquid electrolytes used for gate dielectric layers and succeed to make not only high performance organic field-effect transistors but also demonstrate electric-field control of metal-insulator transition in transition metal oxide thin films.
|
Research Products
(29 results)
