2009 Fiscal Year Final Research Report

Study on AlN phosphor based on stacking fault

Research Project

Project/Area Number	20750169
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Single-year Grants
Research Field	Inorganic industrial materials
Research Institution	National Institute for Materials Science
Principal Investigator	TAKEDA Takashi National Institute for Materials Science, ナノセラミックスセンター, 主任研究員 (60344488)
Project Period (FY)	2008 – 2009
Keywords	蛍光体 / 局所構造 / 窒化アルミニウム / ユーロピム
Research Abstract	The luminescent center europium was studied for the rare earth doped aluminum nitride blue phosphor with silicon nitride. TEM measurement clarified europium and silicon forms the stacking fault between aluminum nitride blocks. Valence analysis showed divalent europium and local structure analysis showed europium occupation at large polyhedron site, coinciding with the luminescent property.

(5 results)